Low-frequency noise and defects in copper and ruthenium resistors by Fleetwood, D. M., Beyne, S., Jiang, R., Zhao, S. E., Wang, P., Bonaldo, S., McCurdy, M. W., Tőkei, Zs, DeWolf, I., Croes, Kristof, Zhang, E. X., Alles, M. L., Schrimpf, R. D., Reed, R. A., Linten, D.

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Phase identification of self-forming Cu–Mn based diffusion barriers on p-SiOC:H and SiO2 dielectrics using x-ray absorption fine structure by Ablett, J. M., Woicik, J. C., Tőkei, Zs, List, S., Dimasi, E.

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Cobalt and Ruthenium drift in ultra-thin oxides by Tierno, D., Varela Pedreira, O., Wu, C., Jourdan, N., Kljucar, L., Tőkei, Zs, Croes, K.

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Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects by Pedreira, O. Varela, Croes, K., Lesniewska, A., Wu, C., van der Veen, M. H., de Messemaeker, J., Vandersmissen, K., Jourdan, N., Wen, L. G., Adelmann, C., Briggs, B., Gonzalez, V. Vega, Bömmels, J., Tokei, Zs

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Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics by Wu, C., Li, Y., Ciofi, I., Kauerauf, Th, Bömmels, J., De Wolf, I., Tőkei, Zs, Croes, K.

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Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials by Wu, C., Li, Y., Leśniewska, A., Varela Pedreira, O., de Marneffe, J.-F., Ciofi, I., Verdonck, P., Baklanov, M. R., Bömmels, J., De Wolf, I., Tőkei, Zs, Croes, K.

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High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5) by Afanas'ev, V. V., Nguyen, A. P. D., Houssa, M., Stesmans, A., Tőkei, Zs, Baklanov, M. R.

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Correlation between field dependent electrical conduction and dielectric breakdown in a SiCOH based low-k (k = 2.0) dielectric by Wu, C., Li, Y., Barbarin, Y., Ciofi, I., Croes, K., Bömmels, J., De Wolf, I., Tőkei, Zs

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Failure mechanisms of PVD Ta and ALD TaN barrier layers for Cu contact applications by Zhao, C., Tőkei, Zs, Haider, A., Demuynck, S.

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Current Understanding of BEOL TDDB Lifetime Models by Croes, K., Wu, C., Kocaay, D., Li, Y., Roussel, Ph, Bömmels, J., Tőkei, Zs

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Ultra-Low Copper Baths for Sub-35 nm Copper Interconnects by Atanasova, T. A., Carbonell, L., Caluwaerts, R., Tőkei, Zs, Strubbe, K., Vereecken, P. M.

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Internal photoemission of electrons at interfaces of metals with low-κ insulators by Shamuilia, S., Afanas’ev, V. V., Somers, P., Stesmans, A., Li, Y.-L., Tőkei, Zs, Groeseneken, G., Maex, K.

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Surface diffusion of copper on tantalum substrates by Ostwald ripening by Fillot, F., Tőkei, Zs, Beyer, G.P.

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Challenges in the implementation of low-k dielectrics in the back-end of line by Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.

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Electron spin resonance study of defects in low- κ oxide insulators ( κ = 2.5–2.0) by Afanas’ev, V.V., Keunen, K., Stesmans, A., Jivanescu, M., Tőkei, Zs, Baklanov, M.R., Beyer, G.P.

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In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures by Vanstreels, K., Czarnecki, P., Kirimura, T., Siew, Y. K., De Wolf, I., Bömmels, J., Tőkei, Zs, Croes, K.

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Grain-boundary diffusion in B2 intermetallic compounds : Effect of ordering on diffusion in the Fe3Al and FeCo compounds by TOKEI, Z, BERNARDINI, J, BEKE, D. L

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Study of the effect of dielectric porosity on the stress in advanced Cu/low- k interconnects using x-ray diffraction by Wilson, C. J., Zhao, C., Zhao, L., Metzger, T. H., Tőkei, Zs, Croes, K., Pantouvaki, M., Beyer, G. P., Horsfall, A. B., O'Neill, A. G.

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Low field TDDB of BEOL interconnects using >40 months of data by Croes, K., Roussel, Ph, Barbarin, Y., Wu, C., Li, Y., Bommels, J., Tokei, Zs

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Simulation and measurement of the capacitance benefit of air gap interconnects for advanced technology nodes by Kumaresan, V., Wilson, C.J., Verdonck, P., Van Besien, E., Lazzarino, F., Truffert, V., Bömmels, J., Tokei, Zs, Wong, T.K.S.

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