Search Results - TALALAEV, Vadim G

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  1. 1
    Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

    Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire by Senichev, Alexander V, Talalaev, Vadim G, Shtrom, Igor V, Blumtritt, Horst, Cirlin, George E, Schilling, Jörg, Lienau, Christoph, Werner, Peter

    Published in ACS photonics
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  2. 2
    Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

    Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing by Tonkikh, Alexander A., Eisenschmidt, Christian, Talalaev, Vadim G., Zakharov, Nikolay D., Schilling, Joerg, Schmidt, Georg, Werner, Peter

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  3. 3
    Tunnel injection emitter structures with barriers comprising nanobridges

    Tunnel injection emitter structures with barriers comprising nanobridges by Senichev, Alexander V., Talalaev, Vadim G., Tomm, Jens W., Zakharov, Nikolai D., Novikov, Boris V., Werner, Peter, Cirlin, George E.

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  4. 4
    Ex post manipulation of barriers in InGaAs tunnel injection devices

    Ex post manipulation of barriers in InGaAs tunnel injection devices by Talalaev, Vadim G., Cirlin, George E., Novikov, Boris V., Fuhrmann, Bodo, Werner, Peter, Tomm, Jens W.

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  5. 5
    Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

    Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon by Lendyashova, Vera V, Ilkiv, Igor V, Talalaev, Vadim G, Shugabaev, Talgat, Reznik, Rodion R, Cirlin, George E

    Published in arXiv.org
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  6. 6
    Tunnel injection emitter structures with barriers comprising nanobridges

    Tunnel injection emitter structures with barriers comprising nanobridges by SENICHEV, Alexander V, TALALAEV, Vadim G, TOMM, Jens W, ZAKHAROV, Nikolai D, NOVIKOV, Boris V, WERNER, Peter, CIRLIN, George E

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  7. 7
    Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix

    Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix by Cirlin, George E., Talalaev, Vadim G., Egorov, Vyatcheslav A., Zakharov, Nikolai D., Werner, Peter, Ledentsov, Nikolai N., Ustinov, Victor M.

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  8. 8
    Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N)

    Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N) by Mussler, Gregor, Däweritz, Lutz, Ploog, Klaus H., Tomm, Jens W., Talalaev, Vadim

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  9. 9
    Carrier dynamics in laterally strain-modulated InGaAs quantum wells

    Carrier dynamics in laterally strain-modulated InGaAs quantum wells by Talalaev, Vadim, Tomm, Jens W., Elsaesser, Thomas, Zeimer, Ute, Fricke, Jörg, Knauer, Arne, Kissel, Heiko, Weyers, Markus, Tarasov, Georgiy G., Grenzer, J., Pietsch, U.

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