Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation by O’Malley, M. L., Timp, G. L., Moccio, S. V., Garno, J. P., Kleiman, R. N.

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Gate oxide reliability projection to the sub-2 nm regime by Weir, B E, Alam, M A, Bude, J D, Silverman, P J, Ghetti, A, Baumann, F, Diodato, P, Monroe, D, Sorsch, T, Timp, G L, Ma, Y, Brown, M M, Hamad, A, Hwang, D, Mason, P

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Ultra-thin gate oxide reliability projections by Weir, B.E., Alam, M.A., Silverman, P.J., Baumann, F., Monroe, D., Bude, J.D., Timp, G.L., Hamad, A., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Ghetti, A., Wilk, G.D.

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Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy by Donnelly, V. M., Klemens, F. P., Sorsch, T. W., Timp, G. L., Baumann, F. H.

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Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS by GREEN, M. L, SORSCH, T. W, TIMP, G. L, MULLER, D. A, WEIR, B. E, SILVERMAN, P. J, MOCCIO, S. V, KIM, Y. O

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Observation of resonant tunneling in silicon inversion layers by FOWLER, A. B, TIMP, G. L, WAINER, J. J, WEBB, R. A

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Quantum mechanical aspects of transport in nanoelectronics by Timp, G.L., Howard, R.E.

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Electrical simulation of scanning capacitance microscopy imaging of the pn junction with semiconductor probe tips by O’Malley, M. L., Timp, G. L., Timp, W., Moccio, S. V., Garno, J. P., Kleiman, R. N.

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Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology by Tennant, D. M., Timp, G. L., Ocola, L. E., Green, M., Sorsch, T., Kornblit, A., Klemens, F., Kleiman, R., Kim, Y., Timp, W.

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Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors by Kleiman, R. N., O’Malley, M. L., Baumann, F. H., Garno, J. P., Timp, G. L.

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Ultra-thin gate dielectrics: they break down, but do they fail? by Weir, B.E., Silverman, P.J., Monroe, D., Krisch, K.S., Alam, M.A., Alers, G.B., Sorsch, T.W., Timp, G.L., Baumann, F., Liu, C.T., Ma, Y., Hwang, D.

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Understanding the limits of ultrathin SiO sub(2) and Si-O-N gate dielectrics for sub-50 nm CMOS by Green, M L, Sorsch, T W, Timp, G L, Muller, D A, Weir, B E, Silverman, P J, Moccio, S V, Kim, Y O

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Selectively δ-doped Al x Ga1− x As/GaAs heterostructures with high two-dimensional electron-gas concentrations n 2DEG≥1.5×1012 cm−2 for field-effect transistors by Schubert, E. F., Cunningham, J. E., Tsang, W. T., Timp, G. L.

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Selectively delta-doped Al(x)Ga(1-x)As/GaAs heterostructures with high two- dimensional electron-gas concentrations (n2DEG) of not less than 1.5 x 10 to the 12th/sq cm for field-ef... by Schubert, E F, Cunningham, J E, Tsang, W T, Timp, G L

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Selectively δ-doped AlxGa1-xAs/GaAs heterostructures with high two-dimensional electron-gas concentrations n2DEG≥1.5×1012 cm-2 for field-effect transistors by SCHUBERT, E. F, CUNNINGHAM, J. E, TSANG, W. T, TIMP, G. L

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Trap assisted tunneling as a mechanism of degradation and noise in 2-5 nm oxides by Alers, G.B., Weir, B.E., Alam, M.A., Timp, G.L., Sorch, T.

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Laser-Guided Assembly of Heterotypic Three-Dimensional Living Cell Microarrays by Akselrod, G.M., Timp, W., Mirsaidov, U., Zhao, Q., Li, C., Timp, R., Timp, K., Matsudaira, P., Timp, G.

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From telomere to telomere: The transcriptional and epigenetic state of human repeat elements by Hoyt, Savannah J, Storer, Jessica M, Hartley, Gabrielle A, Grady, Patrick G S, Gershman, Ariel, de Lima, Leonardo G, Limouse, Charles, Halabian, Reza, Wojenski, Luke, Rodriguez, Matias, Altemose, Nicolas, Rhie, Arang, Core, Leighton J, Gerton, Jennifer L, Makalowski, Wojciech, Olson, Daniel, Rosen, Jeb, Smit, Arian F A, Straight, Aaron F, Vollger, Mitchell R, Wheeler, Travis J, Schatz, Michael C, Eichler, Evan E, Phillippy, Adam M, Timp, Winston, Miga, Karen H, O'Neill, Rachel J

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Plasma virome and the risk of blood-borne infection in persons with substance use disorder by Kandathil, Abraham J., Cox, Andrea L., Page, Kimberly, Mohr, David, Razaghi, Roham, Ghanem, Khalil G., Tuddenham, Susan A., Hsieh, Yu-Hsiang, Evans, Jennifer L., Coller, Kelly E., Timp, Winston, Celentano, David D., Ray, Stuart C., Thomas, David L.

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The complete sequence of a human Y chromosome by Rhie, Arang, Nurk, Sergey, Cechova, Monika, Hoyt, Savannah J., Taylor, Dylan J., Altemose, Nicolas, Hook, Paul W., Koren, Sergey, Rautiainen, Mikko, Alexandrov, Ivan A., Allen, Jamie, Asri, Mobin, Bzikadze, Andrey V., Chen, Nae-Chyun, Chin, Chen-Shan, Diekhans, Mark, Flicek, Paul, Formenti, Giulio, Fungtammasan, Arkarachai, Garcia Giron, Carlos, Garrison, Erik, Gershman, Ariel, Gerton, Jennifer L., Grady, Patrick G. S., Guarracino, Andrea, Haggerty, Leanne, Halabian, Reza, Hansen, Nancy F., Harris, Robert, Hartley, Gabrielle A., Harvey, William T., Haukness, Marina, Heinz, Jakob, Hourlier, Thibaut, Hubley, Robert M., Hunt, Sarah E., Hwang, Stephen, Jain, Miten, Kesharwani, Rupesh K., Lewis, Alexandra P., Li, Heng, Logsdon, Glennis A., Lucas, Julian K., Makalowski, Wojciech, Markovic, Christopher, Martin, Fergal J., Mc Cartney, Ann M., McCoy, Rajiv C., McDaniel, Jennifer, McNulty, Brandy M., Medvedev, Paul, Mikheenko, Alla, Munson, Katherine M., Murphy, Terence D., Olsen, Hugh E., Olson, Nathan D., Paulin, Luis F., Porubsky, David, Potapova, Tamara, Ryabov, Fedor, Salzberg, Steven L., Sauria, Michael E. G., Sedlazeck, Fritz J., Shafin, Kishwar, Shepelev, Valery A., Shumate, Alaina, Storer, Jessica M., Surapaneni, Likhitha, Taravella Oill, Angela M., Thibaud-Nissen, Françoise, Timp, Winston, Tomaszkiewicz, Marta, Vollger, Mitchell R., Walenz, Brian P., Watwood, Allison C., Weissensteiner, Matthias H., Wenger, Aaron M., Wilson, Melissa A., Zarate, Samantha, Zhu, Yiming, Zook, Justin M., Eichler, Evan E., O’Neill, Rachel J., Schatz, Michael C., Miga, Karen H., Makova, Kateryna D., Phillippy, Adam M.

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