Search Results - TING-ARN DAI

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  1. 1
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    The InxGa1−xAsyP1−y (0.53<x<1,0<y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy by Lin, Wei, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shiao, Hung-Pin



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  2. 2
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    Low threshold 1.5 μm quantum well lasers with continuous linear-graded-index InGaAsP layers prepared by organometallic vapor-phase epitaxy by Lin, Wei, Chang, Chwan-Yang, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shi, Tian-Tsorng, Shiao, Hung-Pin



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  3. 3
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    InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz by Wen-Jeng Ho, Ting-Arn Dai, Zuon-Ming Chuang, Wei Lin, Yuan-Kuang Tu, Meng-Chyi Wu



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  4. 4
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    In sub(x)Ga sub(1-x)As sub(y)P sub(1-y) (0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy by Lin, Wei, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shiao, Hung-Pin


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  5. 5
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    The In xGa 1− xAs yP 1− y (0.53< x<1,0< y<1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy by Lin, Wei, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shiao, Hung-Pin



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  6. 6
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    The InxGa1-xAsy(0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy by WEI LIN, YUAN-KUANG TU, TING-ARN DAI, WEN-JENG HO, GWO-YUE LEE


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