Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure by Mativenga, M., Di Geng, Chang, J. H., Tredwell, T. J., Jin Jang

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Degradation Model of Self-Heating Effects in Silicon-on-Glass TFTs by Mativenga, M., Min Hyuk Choi, Jin Jang, Mruthyunjaya, R., Tredwell, T. J., Mozdy, E., Kosik-Williams, C.

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A 1-Megapixel, progressive-scan image sensor with antiblooming control and lag-free operation by Stevens, E.G., Burkey, B.C., Nichols, D.N., Yee, Y.S., Losee, D.L., Lee, T.-H., Tredwell, T.J., Khosla, R.P.

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Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs by Mativenga, M., Choi, M. H., Choi, W., Choi, J. W., Jang, J., Mruthyunjaya, R., Tredwell, T. J., Mozdy, E., Kosik-Williams, C.

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Threshold voltage in short-channel MOS devices by Viswanathan, C.R., Burkey, B.C., Lubberts, G., Tredwell, T.J.

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(Invited) Channel Width and Channel Length Dependencies in Amorphous-Oxide-Semiconductor Thin-Film Transistors: From a Device Structure Perspective by Mativenga, Mallory, Um, Jae Kwang, Mruthyunjaya, Ravi, Chang, Jeff H., Heiler, Gregory N., Tredwell, Timothy J., Jang, J.

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Phonon-Induced Enhancement of the Superconducting Energy Gap by Tredwell, T. J., Jacobsen, E. H.

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A Charge Based Compact Modeling Technique for Monocrystalline TFTs on Glass by Nassar, Christopher J., J. Tredwell, Timothy, Kosik Williams, Carlo, Revelli, Joseph, Bowman, Robert J.

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The 1/f Noise Performance for TFTs Fabricated in Three TFT Technologies: Monocrystalline Silicon on Glass, Low Temperature Polysilicon on Glass, and Silicon on Insulator by Marshall, Stephen A., Nassar, Christopher J., Choi, Jae Won, Jang, Jin, Kosik Williams, Carlo, Mozdy, Eric, J. Tredwell, Timothy, Bowman, Robert J.

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Low Voltage Driven CMOS Circuits Based on Silicon on Glass by Choi, Min Hyuk, Choi, Jae Won, Park, Seung Hyun, Choi, Won Jae, Mativenga, Mallory, Jin, Jang, Mruthyunjaya, Ravi, J. Tredwell, Timothy, Mozdy, Eric, Kosik Williams, Carlo

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Reduction of Hot Carrier Effects in Corning Silicon-on-Glass TFTs by Mativenga, Mallory, Choi, Min Hyuk, Choi, Won Jae, Choi, Jae Won, Jang, Jin, Mruthyunjaya, Ravi, J. Tredwell, Timothy, Mozdy, Eric, Kosik Williams, Carlo

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Phonon-induced increase in the energy gap of superconducting films by Tredwell, T. J., Jacobsen, E. H.

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Interface-state parameter determination by deep-level transient spectroscopy by Tredwell, T. J., Viswanathan, C. R.

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Steady-state photocarrier collection in silicon imaging devices by Lavine, J.P., Trabka, E.A., Burkey, B.C., Tredwell, T.J., Nelson, E.T., Anagnostopoulos, C.

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Determination of interface-state parameters in a MOS capacitor by DLTS by Tredwell, T.J., Viswanathan, C.R.

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Channel potential and channel width in narrow buried-channel MOSFET's by Burkey, B.C., Lubberts, G., Trabka, E.A., Tredwell, T.J.

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A solid-state image sensor for image recording at 2000 frames per second by Teh-Huang Lee, Tredwell, T.J., Burkey, B.C., Anagnostopoulos, C., Hayward, J.S., Kelly, T.M., Khosla, R.P., Losee, D.L., Lavine, J.P.

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Phonon detection by Josephson junctions by Tredwell, T.J., Jacobsen, E.H.

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Low Voltage-Driven CMOS Circuits Based on SiOG by Choi, M. H., Choi, J. W., Park, S. H., Choi, W. J., Mativenga, M., Jang, J., Mruthyunjaya, R., Tredwell, T. J., Mozdy, E., Williams, C. K.

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1/f Noise in (Hg, Cd)Te photodiodes by Tobin, S.P., Iwasa, S., Tredwell, T.J.

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