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Device-quality wide-gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures
by
HISHIKAWA, Y
,
TSUGE, S
,
NAKAMURA, N
,
TSUDA, S
,
NAKANO, S
,
KUWANO, Y
Published in
Journal of applied physics
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Effect of Heating SiH 4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
by
Hishikawa, Yoshihiro
,
Sasaki, Manabu
,
Sadaji Tsuge, Sadaji Tsuge
,
Shinya Tsuda, Shinya Tsuda
Published in
Japanese Journal of Applied Physics
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Effect of substrates and film thickness on the structural, optical, and electrical properties of hydrogenated amorphous silicon films
by
HISHIKAWA, Y
,
TSUGE, S
,
NAKAMURA, N
,
TSUDA, S
,
NAKANO, S
,
KUWANO, Y
Published in
Applied physics letters
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High-quality wide-gap hydrogenated amorphous silicon fabricated using hydrogen plasma post-treatment
by
OKAMOTO, S
,
HISHIKAWA, Y
,
TSUGE, S
,
SASAKI, M
,
NINOMIYA, K
,
NISHIKUNI, M
,
TSUDA, S
Published in
Japanese Journal of Applied Physics
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HIT super(TM) Cells-High-Efficiency Crystalline Si Cells with Novel Structure
by
Taguchi, Mikio
,
Kawamoto, Kunihiro
,
Tsuge, Sadaji
,
Baba, Toshiaki
,
Sakata, Hitoshi
,
Morizane, Masashi
,
Uchihashi, Kenji
Published in
Progress in photovoltaics
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High-efficiency a-Si/c-Si heterojunction solar cell
by
Sawada, T.
,
Terada, N.
,
Tsuge, S.
,
Baba, T.
,
Takahama, T.
,
Wakisaka, K.
,
Tsuda, S.
,
Nakano, S.
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Conference Proceeding
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HIT cells-high-efficiency crystalline Si cells with novel structure: Progress in Crystalline Silicon Solar Cells
by
TAGUCHI, Mikio
,
KAWAMOTO, Kunihiro
,
TSUGE, Sadaji
,
BABA, Toshiaki
,
SAKATA, Hitoshi
,
MORIZANE, Masashi
,
UCHIHASHI, Kenji
,
NAKAMURA, Noboru
,
KIYAMA, Seiichi
,
OOTA, Osamu
Published in
Progress in photovoltaics
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HITTM cells-high-efficiency crystalline Si cells with novel structure
by
Taguchi, Mikio
,
Kawamoto, Kunihiro
,
Tsuge, Sadaji
,
Baba, Toshiaki
,
Sakata, Hitoshi
,
Morizane, Masashi
,
Uchihashi, Kenji
,
Nakamura, Noboru
,
Kiyama, Seiichi
,
Oota, Osamu
Published in
Progress in photovoltaics
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Effect of heating SiH4 on the plasma chemical vapor deposition of hydrogenated amorphous silicon
by
HISHIKAWA, Y
,
SASAKI, M
,
TSUGE, S
,
TSUDA, S
Published in
Japanese journal of applied physics
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