Search Results - TSUJII, Hideji

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  1. 1
    In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

    In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor by Okamoto, Hiroki, Hokazono, Akira, Adachi, Kanna, Yasutake, Nobuaki, Itokawa, Hiroshi, Okamoto, Shintaro, Kondo, Masaki, Tsujii, Hideji, Ishida, Tatsuya, Aoki, Nobutoshi, Fujiwara, Makoto, Kawanaka, Shigeru, Azuma, Atsushi, Toyoshima, Yoshiaki

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  2. 2
    IR spectra of hydrogen bonding of H2S doped in Kr solids

    IR spectra of hydrogen bonding of H2S doped in Kr solids by Tsujii, Hideji, Takizawa, Kenji, Koda, Seiichiro

    Published in Chemical physics
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  3. 3
    IR spectra of hydrogen bonding of H 2S doped in Kr solids

    IR spectra of hydrogen bonding of H 2S doped in Kr solids by Tsujii, Hideji, Takizawa, Kenji, Koda, Seiichiro

    Published in Chemical physics
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  4. 4
    Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films

    Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films by Sonehara, T., Hokazono, A., Akutsu, H., Sasaki, T., Uchida, H., Tomita, M., Tsujii, H., Kawanaka, S., Inaba, S., Toyoshima, Y.

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  5. 5
    Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si1-xGex virtual substrate

    Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si1-xGex virtual substrate by KAWASAKI, Hirohisa, OHUCHI, Kazuya, AOKI, Nobutoshi, KANEMURA, Takahisa, HAGISHNW, Daisuke, FUJIWARA, Makoto, INABA, Satoshi, ISHIRNARU, Kazunari, NAGASHIMA, Naoki, ISHIUCHI, Hidemi, OISHI, Amane, FUJII, Osamu, TSUJII, Hideji, ISHIDA, Tatsuya, KASAI, Kunihiro, OKAYAMA, Yasunori, KOJIMA, Kenji, ADACHI, Kanna

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  6. 6
    Normal Assembly of 60 S Ribosomal Subunits Is Required for the Signaling in Response to a Secretory Defect in Saccharomyces cerevisiae

    Normal Assembly of 60 S Ribosomal Subunits Is Required for the Signaling in Response to a Secretory Defect in Saccharomyces cerevisiae by Miyoshi, Keita, Tsujii, Rota, Yoshida, Hideji, Maki, Yasushi, Wada, Akira, Matsui, Yasushi, Toh-e, Akio, Mizuta, Keiko

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