The influence of the ion implantation temperature and the flux on smart-cut© in GaAs by Webb, M., Jeynes, C., Gwilliam, R.M., Tabatabaian, Z., Royle, A., Sealy, B.J.

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Implantation induced interdiffusion of InGaAs quantum dots-effect of ion species, dose and substrate temperature by Ahmed, S., Amirov, K., Larsson, U., Lin, J., Haq, A., Too, P., Tabatabaian, Z.

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Concentration profiles of antimony-doped shallow layers in silicon by Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C, Sealy, B J

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Determination of minimum detectable mass of impurities in industrial objects using neutrons in transmission by Tabatabaian, Z., Spyrou, N.M.

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Influence of interfaces on the rates of crosslinking in poly(dimethyl siloxane) coatings by Simpson, T. R. E., Tabatabaian, Z., Jeynes, C., Parbhoo, B., Keddie, J. L.

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The new Surrey ion beam analysis facility by Simon, A., Jeynes, C., Webb, R.P., Finnis, R., Tabatabaian, Z., Sellin, P.J., Breese, M.B.H., Fellows, D.F., van den Broek, R., Gwilliam, R.M.

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The Wall and Multivalent Counterion Effects on the Electrostatic Force between Like-Charged Spherical Particles Confined in a Charged Pore by Sharif, Adel O, Tabatabaian, Zinat, Bowen, W.Richard

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