Search Results - Taferner, W.T.

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  1. 1
    The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED

    The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED by Bensaoula, A., Taferner, W.T., Kim, E., Bousetta, A.

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  2. 2
    The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED

    The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED by Taferner, W.T., Bensaoula, A., Kim, E., Bousetta, A.

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  3. 3
    Chemisorption on substrates with long-range interactions

    Chemisorption on substrates with long-range interactions by Taferner, W.T., Davison, S.G.

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  4. 4
    In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

    In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy by Taferner, W.T, Mahalingam, K, Dorsey, D.L, Eyink, K.G

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  5. 5
    Combined use of computational intelligence and materials data for on-line monitoring and control of MBE experiments

    Combined use of computational intelligence and materials data for on-line monitoring and control of MBE experiments by Meng, Zhuo, Yang, Qian, Yip, P.C., Eyink, K.G., Taferner, W.T., Igelnik, B.

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  6. 6
    In-situ spectral ellipsometry monitoring/control of MBE growth

    In-situ spectral ellipsometry monitoring/control of MBE growth by Evink, K.G., Taferner, W.T., Mahalingam, K., Dorsey, D.L., Adams, S.

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