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Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs
by
Cretu, Bogdan
,
Tahiat, Abderrahim
,
Veloso, Anabela
,
Simoen, Eddy
Published in
IEEE transactions on electron devices
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(Invited) In-Depth Understanding of the Key Contributors to the Total Flicker Noise in Advanced Logic Devices
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Cretu, Bogdan
,
Tahiat, Abderrahim
,
Veloso, Anabela
,
Simoen, Eddy
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ECS transactions
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(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures
by
Cretu, Bogdan
,
Tahiat, Abderrahim
,
Veloso, Anabela
,
Simoen, Eddy
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Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs
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Tahiat, Abderrahim
,
Cretu, Bogdan
,
Veloso, Anabela
,
Simoen, Eddy
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Trap Identification in Gate-All-Around Vertically Stacked Si n-channel Nanosheet FETs
by
Tahiat, Abderrahim
,
Cretu, Bogdan
,
Veloso, Anabela
,
Simoen, Eddy
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Logic Gates
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Fluctuations
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Gaa-Vnw Pmosfets
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Mosfet
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Resistance
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1/F Noise Modelling
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Correlated Carrier Number And Mobility Fluctuations
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