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    Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

    Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements by Komaba, Shintaro, Taketa, Nana, Asami, Meita, Sugiyama, Masakazu, Ikari, Tetsuo, Fukuyama, Atsuhiko

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