Physical analysis and optimization of electromagnetic coilgun launch systems by Zhou, Joshua, Liu, Takyiu

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AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications by Chanh Nguyen, Takyiu Liu, Chen, M., Hsiang-Chih Sun, Rensch, D.

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Design and Characterization of High Efficiency Single-stage Electromagnetic Coil Guns by Chen, Sophia, Peng, Annie, Chen, Ava, Liu, Takyiu

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Millimeter wave InP HEMT technology: Performance and applications by Nguyen, Loi D, Le, Minh V, Liu, Takyiu, Lui, Mark, Kaneko, Karen, Holzman, Eric, Delaney, Michael J

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Bandgap engineered InP-based power double heterojunction bipolar transistors by Chanh Nguyen, Takyiu Liu, Chen, M., Virk, R., Chen, M.

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Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers by Pospieszalski, M.W., Lakatosh, W.J., Wollack, E., Nguyen, L.D., Minh Le, Lui, M., Takyiu Liu

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On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness by Meneghesso, G., Neviani, A., Oesterholt, R., Matloubian, M., Liu, T., Brown, J.J., Canali, C., Zanoni, E.

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High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs by Long Tran, Isobe, R., Delaney, M., Rhodes, R., Jang, D., Brown, J., Loi Nguyen, Minh Le, Thompson, M., Takyiu Liu

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InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ by Liu, Takyiu, Chen, Mary, Nguyen, Chanh, Virk, Robinder

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Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs by Meneghesso, G., Mion, A., Neviani, A., Matloubian, M., Brown, J., Hafizi, M., Takyiu Liu, Canali, C., Pavesi, M., Manfredi, M., Zanoni, E.

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AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications by Chanh Nguyen, Takyiu Liu, Chen, M., Hsiang-Chih Sun, Rensch, D.

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A high-performance AlInAs/InGaAs/InP DHBT K-band power cell by Virk, R.S., Chen, M.Y., Chanh Nguyen, Takyiu Liu, Matloubian, M., Rensch, D.B.

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A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier by Rosenbaum, S.E., Jelloian, L.M., Larson, L.E., Mishra, U.K., Pierson, D.A., Thompson, M.S., Liu, T., Brown, A.S.

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Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs by Pospieszalski, M.W., Lakatosh, W.J., Nguyen, L.D., Lui, M., Takyiu Lin, Minh Le, Thompson, M.A., Delaney, M.J.

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Chirped superlattice hot electron transistor by Chanh Nguyen, Hsiang-Chih Sun, Takyiu Liu

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Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's by Pospieszalski, M.W., Nguyen, L.D., Lui, M., Liu, T., Thompson, M.A., Delaney, M.I.

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A 7 to 11 GHz AlInAs/GaInAs/InP MMIC low noise amplifier by Rosenbaum, S.E., Chou, C.S., Ngo, C.M., Larson, L.E., Liu, T., Thompson, M.A.

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Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs by Matloubian, M., Jelloian, L.M., Lui, M., Liu, T., Thompson, M.A.

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Open channel impact-ionization effects in InP-based HEMT's and their dependence on channel quantization and temperature by Meneghesso, G., Matloubian, M., Brown, J., Liu, T., Canali, C., Mion, A., Neviani, A., Zanoni, E.

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