Search Results - Talipov, N.Kh

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  1. 1
    HIGH-SENSITIVE TWO-LAYER PHOTORESISTORS BASED ON p-[Cd.sub.x][Hg.sub.i-x]Te WITH A CONVERTED NEAR-SURFACE LAYER

    HIGH-SENSITIVE TWO-LAYER PHOTORESISTORS BASED ON p-[Cd.sub.x][Hg.sub.i-x]Te WITH A CONVERTED NEAR-SURFACE LAYER by Ismailov, N.D, Talipov, N.Kh, Voitsekhovskii, A.V

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  2. 2
    Low-temperature activation of ion-implanted boron and nitrogen ions in [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial layers

    Low-temperature activation of ion-implanted boron and nitrogen ions in [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial layers by Voitsekhovskii, A.V, Talipov, N.Kh

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  3. 3
    Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors

    Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors by Sredin, V. G., Voitsekhovskii, A. V., Sakharov, M. V., Talipov, N. Kh

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  4. 4
    Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions

    Long-term room-temperature relaxation of the defects induced in (Hg,Cd)Te by low-energy ions by Izhnin, I.I., Mynbaev, K.D., Pociask, M., Mudryy, R.Ya, Voitsekhovskii, A.V., Talipov, N.Kh

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  5. 5
    Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in [Cd.sub.x][Hg.sub.1-x]Te epitaxial layers

    Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in [Cd.sub.x][Hg.sub.1-x]Te epitaxial layers by Voitsekhovskii, A.V, Shulga, S.A, Sredin, V.G, Talipov, N.Kh

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  6. 6
    Electrical activation of boron implanted in p-HgCdTe ( x = 0.22) by low-temperature annealing under an anodic oxide

    Electrical activation of boron implanted in p-HgCdTe ( x = 0.22) by low-temperature annealing under an anodic oxide by Talipov, N.Kh, Ovsyuk, V.N., Remesnik, V.G., Vasilyev, V.V.

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  7. 7
    Planar photodiodes based on p-HgCdTe ( x = 0.22) epilayers grown by molecular beam epitaxy

    Planar photodiodes based on p-HgCdTe ( x = 0.22) epilayers grown by molecular beam epitaxy by Ovsyuk, V.N., Remesnik, V.G., Studenikin, S.A., Suslyakov, A.O., Talipov, N.Kh, Vasil'ev, V.V., Zahar'yash, T.I., Sidorov, Yu.G., Dvoretsky, S.A., Mikhaylov, N.N., Liberman, V.G., Varavin, V.S.

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