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    A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features

    A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features by Bueno, Paulo R, Tararan, Ronald, Parra, Rodrigo, Joanni, Ednan, Ramírez, Miguel A, Ribeiro, Willian C, Longo, Elson, Varela, José A

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    A polaronic stacking fault defect model for CaCu 3 Ti 4 O 12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features

    A polaronic stacking fault defect model for CaCu 3 Ti 4 O 12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features by Bueno, Paulo R, Tararan, Ronald, Parra, Rodrigo, Joanni, Ednan, Ramírez, Miguel A, Ribeiro, Willian C, Longo, Elson, Varela, José A

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