Search Results - Tarui, Yoichiro

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  1. 1
    Characteristics of 4H–SiC MOS interface annealed in N2O

    Characteristics of 4H–SiC MOS interface annealed in N2O by Fujihira, Keiko, Tarui, Yoichiro, Imaizumi, Masayuki, Ohtsuka, Ken-ichi, Takami, Tetsuya, Shiramizu, Tatsuya, Kawase, Kazumasa, Tanimura, Jyunji, Ozeki, Tatsuo

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  2. 2
    Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

    Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs by Furuhashi, Masayuki, Tanioka, Toshikazu, Ebiike, Yuji, Suekawa, Eisuke, Tarui, Yoichiro, Sakai, Shinji, Yutani, Naoki, Miura, Naruhisa, Imaizumi, Masayuki, Yamakawa, Satoshi, Oomori, Tatsuo

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  3. 3
    Heteroepitaxial growth of single crystalline 3C-SiC on Si substrates by gas source molecular beam epitaxy

    Heteroepitaxial growth of single crystalline 3C-SiC on Si substrates by gas source molecular beam epitaxy by YOSHINOBU, T, MITSUI, H, TARUI, Y, FUYUKI, T, MATSUNAMI, H

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  4. 4
    SPECULAR SURFACE MORPHOLOGY OF ALUMINUM-IMPLANTED 4H-SiC(000-1) BY SiH4-ADDED Ar ANNEAL

    SPECULAR SURFACE MORPHOLOGY OF ALUMINUM-IMPLANTED 4H-SiC(000-1) BY SiH4-ADDED Ar ANNEAL by Fujihira, K, Tarui, Y, Imaizumi, M, Ohtsuka, K, Takami, T, Ozeki, T

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  5. 5
    Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy

    Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy by Hatayama, Tomoaki, Tarui, Yoichiro, Fuyuki, Takashi, Matsunami, Hiroyuki

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  6. 6
    Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum

    Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuum by Hatayama, Tomoaki, Tarui, Yoichiro, Yoshinobu, Tastuo, Fuyuki, Takashi, Matsunami, Hiroyuki

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  7. 7
    Cracking of saturated hydrocarbon gas molecular beam for carbonization of Si(001) surface

    Cracking of saturated hydrocarbon gas molecular beam for carbonization of Si(001) surface by YOSHINOBU, T, MITSUI, H, TARUI, Y, FUYUKI, T, MATSUNAMI, H

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  8. 8
    Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000\bar1) by SiH 4 -Added Ar Anneal

    Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000\bar1) by SiH 4 -Added Ar Anneal by Fujihira, Keiko, Tarui, Yoichiro, Imaizumi, Masayuki, Ohtsuka, Ken-ichi, Takami, Tetsuya, Ozeki, Tatsuo

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