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Search Results - Tassev, V.L.
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Modeling of gas phase and surface reactions in an aluminum nitride growth system
by
Cai, D.
,
Zheng, L.L.
,
Zhang, H.
,
Tassev, V.L.
,
Bliss, D.F.
Published in
Journal of crystal growth
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Aluminum nitride substrate growth by halide vapor transport epitaxy
by
Bliss, D.F.
,
Tassev, V.L.
,
Weyburne, D.
,
Bailey, J.S.
Published in
Journal of crystal growth
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Modeling of aluminum nitride growth by halide vapor transport epitaxy method
by
Cai, D.
,
Zheng, L.L.
,
Zhang, H.
,
Tassev, V.L.
,
Bliss, D.F.
Published in
Journal of crystal growth
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Peer Reviewed
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Articles
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Journal Title
Journal Of Crystal Growth
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Subjects
Crystallography
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Materials Science
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Materials Science, Multidisciplinary
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Technology
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3
A1. Halide Vapor Transport Epitaxy Reactor
2 results
2
B2. Semiconducting Aluminum Nitride
2 results
2
Condensed Matter Physics
2 results
2
Inorganic Chemistry
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2
Materials Chemistry
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2
A1. Computer Simulation
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1
A1. Gas-Phase Reaction
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1
A1. Mass Transfer
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1
A1.Computer Simulation
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1
A3. Chemical Vapor Deposition Process
1 results
1
A3. Halide Vapor Phase Epitaxy
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1
A3.Chemical Vapor Deposition Process
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Year of Publication
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Sciencedirect
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Elsevier
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Elsevier Sd Backfile Materials Science
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Backfile Package - Physics General (Legacy) [Ypa]
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3