Publisher’s Note: “Mid-IR photothermal measurement of substantial heat transport by surface waves of polar amorphous films supported on silicon” [J. Appl. Phys. 128, 095105 (2020)]... by Hamyeh, S., Tauk, R., Adam, P.-M., Kazan, M.

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Mid-IR photothermal measurement of substantial heat transport by surface waves of polar amorphous films supported on silicon by Hamyeh, S., Tauk, R., Adam, P.-M., Kazan, M.

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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power by Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., Gallon, C., Boeuf, F., Skotnicki, T., Fenouillet-Beranger, C., Maude, D. K., Rumyantsev, S., Shur, M. S.

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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity by Abou-Hamdan, L, Hamyeh, S, Iskandar, A, Tauk, R, Brault, J, Tabbal, M, Adam, P-M, Kazan, M

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Study of the mechanical properties of two organic–inorganic hybrid systems: GPTMS/colloidal silica and GPTMS/TEOS by Yaacoub, S., Calas, S., Jabbour, J., Tauk, R., Zaouk, D., Khoury, A., Etienne, P.

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Synthesis of new vinyl ether functionalized silica for UV-patterning by Yaacoub, S., Calas-Etienne, S., Jabbour, J., Courson, R., Tauk, R., Khoury, A., Mehdi, A., Etienne, P.

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Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors by Łusakowski, J., Knap, W., Meziani, Y., Cesso, J.-P., Fatimy, A. El, Tauk, R., Dyakonova, N., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity by Abou-Hamdan, L, Hamyeh, Sobhe, Iskandar, A, Tauk, R, Brault, J, Tabbal, M, Adam, Pierre-Michel, Kazan, M

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Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN ∕ GaN heterostructures by Lorenzini, P., Bougrioua, Z., Tiberj, A., Tauk, R., Azize, M., Sakowicz, M., Karpierz, K., Knap, W.

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Low electron mobility of field-effect transistor determined by modulated magnetoresistance by Tauk, R., Łusakowski, J., Knap, W., Tiberj, A., Bougrioua, Z., Azize, M., Lorenzini, P., Sakowicz, M., Karpierz, K., Fenouillet-Beranger, C., Cassé, M., Gallon, C., Boeuf, F., Skotnicki, T.

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Electron mobility in quasi-ballistic Si MOSFETs by Łusakowski, J., Knap, W., Meziani, Y., Cesso, J.-P., El Fatimy, A., Tauk, R., Dyakonova, N., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n- doped AlxGa1−xN films using infrared spectroscopy by Rahbany, N., Kazan, M., Tabbal, M., Tauk, R., Jabbour, J., Brault, J., Damilano, B., Massies, J.

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Superconductivity of InN with a well defined Fermi surface by Inushima, T., Kato, N., Maude, D. K., Lu, Hai, Schaff, W. J., Tauk, R., Meziani, Y., Ruffenack, S., Briot, O., Knap, W., Gil, B., Miwa, H., Yamamoto, A., Muto, D., Nanishi, Y., Higashiwaki, M., Matsui, T.

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Magnetotransport characterization of AlGaN/GaN interfaces by Tauk, R., Tiberj, A., Lorenzini, P., Bougrioua, Z., Azize, M., Sakowicz, M., Karpierz, K., Knap, W.

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Electron mobility in quasi ballistic Si MOSFETs by Lusakowski, J., Knap, W., Meziani, Y., Cesso, J.- P., Fatimy, A. El, Tauk, R., Dyakonova, N., Ghibaudo, Gérard, Boeuf, F., Skotnicki, T.

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Electron Mobility and Concentration on Submicrometer Scale - Investigation of Si and AlGaN/GaN Field Effect Transistors by AC Magnetoresistance Method by Sakowicz, M, Lusakowski, J, Karpierz, K, Grynberg, M, Majkusiak, B, Tauk, R, Tiberj, A, Knap, W, Bougrioua, Z, Azize, M, Lorenzini, P, Boeuf, F, Skotnicki, T

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Superconductivity of InN as an intrinsic property by Inushima, T, Maude, D K, Kato, N, Lu, Hai, Schaff, W J, Tauk, R, Meziani, Y, Ruffenach, S, Briot, O, Knap, W, Gil, B, Miwa, H, Yamamoto, A, Muto, D, Nanishi, Y

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Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis by Łusakowski, J., Martínez, M. J. Martín, Rengel, R., González, T., Tauk, R., Meziani, Y. M., Knap, W., Boeuf, F., Skotnicki, T.

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Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors by Sakowicz, M., Tauk, R., Łusakowski, J., Tiberj, A., Knap, W., Bougrioua, Z., Azize, M., Lorenzini, P., Karpierz, K., Grynberg, M.

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Influence of ballistic and pocket effects on electron mobility in Si MOSFETs by Lusakowski, J., Knap, W., Meziani, Y., Cesso, J.P., El Fatimy, A., Tauk, R., Dyakonova, N., Ghibaudo, G., Boeuf, F., Skotnicki, T.

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