Fabrication and Characterization of Microstructured Magnetic Tunnel Junction Rings by Chen, C.C., Chang, C.C., Kuo, C.Y., Horng, L., Wu, J.C., Teho Wu, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M.

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Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings by Chen, C. C., Chao, C. T., Kuo, C. Y., Horng, Lance, Wu, Teho, Chern, G., Huang, C. Y., Isogami, S., Tsunoda, M., Takahashi, M., Wu, J. C.

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Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions by Kuo, K.M., Lin, C.Y., Lin, C.T., Chern, G., Chao, C.T., Horng, Lance, Wu, J.C., Wu, Teho, Huang, C.Y., Ohyama, H., Isogami, S., Tsunoda, M., Takahashi, M.

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Effect of low-frequency AC magnetic susceptibility of Ru/Co^sub 60^Fe^sub 20^V^sub 20^ and Ta/Co^sub 60^Fe^sub 20^V^sub 20^ films by Chen, Yuan­Tsung, Chang, Yung­Huang, Liu, Wen­Jen, Liang, Wei­Chiao, Hsieh, Chin­Heng, Wu, Te­Ho

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Size dependence of magnetization reversal of ring shaped magnetic tunnel junction by Chen, C.C., Kuo, C.Y., Chang, Y.C., Chang, C.C., Horng, Lance, Wu, Teho, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M., Wu, J.C.

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Angular Dependence of Magnetoresistance During Magnetization Reversal on Magnetic Tunnel Junction Ring by Chen, C.C., Chang, C.C., Chang, Y.C., Chao, C.T., Kuo, C.Y., Horng, L., Wu, J.C., Teho Wu, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M.

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The switching characteristics of free layer of patterned magnetic tunnel junction device by Chen, C.C., Wang, Y.R., Kuo, C.Y., Wu, J.C., Horng, Lance, Wu, Teho, Yoshimura, S., Tsunoda, M., Takahashi, M.

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