Search Results - Tempest, S.L.

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  1. 1
    1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology

    1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology by Johnson, R.A., Zierak, M.J., Outama, K.B., Bahn, T.C., Joseph, A.J., Cordero, C.N., Malinowski, J., Bard, K.A., Weeks, T.W., Milliken, R.A., Medve, T.J., May, G.A., Chong, W., Walter, K.M., Tempest, S.L., Chau, B.B., Boenke, M., Nelson, M.W., Harame, D.L.

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    Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication by Guarini, K.W., Topol, A.W., Ieong, M., Yu, R., Shi, L., Newport, M.R., Frank, D.J., Singh, D.V., Cohen, G.M., Nitta, S.V., Boyd, D.C., O'Neil, P.A., Tempest, S.L., Pogge, H.B., Purushothaman, S., Haensch, W.E.

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