Search Results - Tessariol, Paolo

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  1. 1
    Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part I: Polysilicon-Induced Variability

    Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part I: Polysilicon-Induced Variability by Resnati, Davide, Mannara, Aurelio, Nicosia, Gianluca, Paolucci, Giovanni M., Tessariol, Paolo, Spinelli, Alessandro S., Lacaita, Andrea L., Monzio Compagnoni, Christian

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  2. 2
    Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part II: Random Telegraph Noise

    Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part II: Random Telegraph Noise by Nicosia, Gianluca, Mannara, Aurelio, Resnati, Davide, Paolucci, Giovanni M., Tessariol, Paolo, Spinelli, Alessandro S., Lacaita, Andrea L., Goda, Akira, Monzio Compagnoni, Christian

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  3. 3
    A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories

    A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories by Paolucci, Giovanni M., Spinelli, Alessandro S., Compagnoni, Christian Monzio, Tessariol, Paolo

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  4. 4
    Comments on "A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs"

    Comments on "A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs" by Paolucci, Giovanni M., Spinelli, Alessandro S., Monzio Compagnoni, Christian, Tessariol, Paolo

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  5. 5
    Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories

    Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories by Maconi, Alessandro, Compagnoni, Christian Monzio, Amoroso, Salvatore M, Mascellino, Evelyne, Ghidotti, Michele, Padovini, Giorgio, Spinelli, Alessandro S, Lacaita, Andrea L, Mauri, Aurelio, Ghidini, Gabriella, Galbiati, Nadia, Sebastiani, Alessandro, Scozzari, Claudia, Greco, Eugenio, Camozzi, Elisa, Tessariol, Paolo

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  6. 6
    Reliability constraints for TANOS memories due to alumina trapping and leakage

    Reliability constraints for TANOS memories due to alumina trapping and leakage by Amoroso, S M, Mauri, A, Galbiati, N, Scozzari, C, Mascellino, E, Camozzi, E, Rangoni, A, Ghilardi, T, Grossi, A, Tessariol, P, Compagnoni, C M, Maconi, A, Lacaita, A L, Spinelli, A S, Ghidini, G

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