Search Results - Tewksbury, T.L.

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  1. 1
    Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs

    Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs by Tewksbury, T.L., Hae-Seung Lee

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  2. 2
    A 27-mW CMOS fractional-N synthesizer using digital compensation for 2.5-Mb/s GFSK modulation

    A 27-mW CMOS fractional-N synthesizer using digital compensation for 2.5-Mb/s GFSK modulation by Perrott, M.H., Tewksbury, T.L., Sodini, C.G.

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  3. 3
    A 27 mW CMOS fractional-N synthesizer/modulator IC

    A 27 mW CMOS fractional-N synthesizer/modulator IC by Perrott, M.H., Tewksbury, T.L., Sodini, C.G.

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  4. 4
    A wide-band 10-b 20 Ms/s pipelined ADC using current-mode signals

    A wide-band 10-b 20 Ms/s pipelined ADC using current-mode signals by Real, P., Robertson, D.H., Mangelsdorf, C.W., Tewksbury, T.L.

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  5. 5
    The effects of oxide traps on the large-signal transient response of analog MOS circuits

    The effects of oxide traps on the large-signal transient response of analog MOS circuits by Tewksbury, T.L., Lee, H.-S., Miller, G.A.

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  6. 6
    Characterization, modeling and minimization of transient threshold voltage shifts in MOSFETs

    Characterization, modeling and minimization of transient threshold voltage shifts in MOSFETs by Tewksbury, T.L., Lee, H.-S.

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  7. 7
    A 1 V, 5 mW, 1.8 GHz, balanced voltage-controlled oscillator with an integrated resonator

    A 1 V, 5 mW, 1.8 GHz, balanced voltage-controlled oscillator with an integrated resonator by Hitko, D.A., Tewksbury, T.L., Sodini, C.G.

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  8. 8
    Strong carrier freezeout above 77 K in tellurium-doped buried-channel MOS transistors

    Strong carrier freezeout above 77 K in tellurium-doped buried-channel MOS transistors by Tewksbury, S.K., Biazzo, M.R., Lindstrom, T.L.

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