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    Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence

    Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence by Thangavel, Kuntavai, Aruchamy, Prasanth, Joghee, Prasad, Palanisamy, Chandrasekar

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