L{sub g} = 100 nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer by Koh, D., SEMATECH, Inc., Albany, New York 12203, Kwon, H. M., Kim, T.-W., Veksler, D., Gilmer, D., Kirsch, P. D., Kim, D.-H., GLOBALFOUNDRIES, Malta, New York 12020, Hudnall, Todd W., Bielawski, Christopher W., Maszara, W., Banerjee, S. K.

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Atomic layer etching of BeO using BCl sub(3)/Ar for the interface passivation layer of III-V MOS devices by Min, K S, Kang, S H, Kim, J K, Yum, J H, Jhon, Y I, Hudnall, Todd W, Bielawski, C W, Banerjee, S K, Bersuker, G, Jhon, M S, Yeom, G Y

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Photochemically Switching Diamidocarbene Spin States Leads to Reversible Büchner Ring Expansions by Perera, Tharushi A, Reinheimer, Eric W, Hudnall, Todd W

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Azide ion recognition in water-CHCl(3) using a chelating phosphonium borane as a receptor by Kim, Youngmin, Hudnall, Todd W, Bouhadir, Ghenwa, Bourissou, Didier, Gabbaï, François P

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Innentitelbild: Isolation of a Neutral P 8 Cluster by [2+2] Cycloaddition of a Diphosphene Facilitated by Carbene Activation of White Phosphorus (Angew. Chem. 16/2013) by Dorsey, Christopher L., Squires, Brian M., Hudnall, Todd W.

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Isolation of a Neutral P 8 Cluster by [2+2] Cycloaddition of a Diphosphene Facilitated by Carbene Activation of White Phosphorus by Dorsey, Christopher L., Squires, Brian M., Hudnall, Todd W.

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Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2 O 3 deposited as an interface passivation layer on GaAs MOS devices by Yum, J. H., Akyol, T., Ferrer, D. A., Lee, J. C., Banerjee, S. K., Lei, M., Downer, M., Hudnall, Todd W., Bielawski, C. W., Bersuker, G.

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Aliphatic-aromatic copolyesters derived from 2,2,4,4-tetramethyl-1,3-cyclobutanediol by Hoppens, Nathan C., Hudnall, Todd W., Foster, Adam, Booth, Chad J.

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A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer by Yum, J. H., Shin, H. S., Mushinski, R. M., Hudnall, T. W., Oh, J., Loh, W. Y., Bielawski, C. W., Bersuker, G., Banerjee, S. K., Wang, W. E., Kirsch, P. D., Jammy, R.

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Comparative Study of SiO 2 , Al 2 O 3 , and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by Yum, J. H., Oh, J., Hudnall, Todd. W., Bielawski, C. W., Bersuker, G., Banerjee, S. K.

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A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices by Yum, J. H., Bersuker, G., Hudnall, T. W., Bielawski, C. W., Kirsch, P., Banerjee, S. K.

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Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs : ADVANCED MATERIALS FOR POWER ELECTRONICS AND POWER CONDITIONING S... by JOHNSON, Derek W, JUNG HWAN YUM, HUDNALL, Todd W, MUSHINSKI, Ryan M, BIELAWSKI, Christopher W, ROBERTS, John C, WANG, Wei-E, BANERJEE, Sanjay K, HARRIS, H. Rusty

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ALD beryllium oxide: Novel barrier layer for high performance gate stacks on Si and high mobility substrates by Yum, J. H., Bersuker, G., Ferrer, D. A., Akyol, T., Lei, M., Park, K. W., Hudnall, T. W., Downer, M. C., Bielawski, C. W., Yu, E. T., Price, J., Kirsch, P., Jammy, R., Lee, J. C., Banerjee, S. K.

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Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices by Koh, D., Yum, J. H., Akyol, T., Ferrer, D. A., Lei, M., Hudnall, T. W., Downer, M. C., Bielawski, C. W., Hill, R., Bersuker, G., Banerjee, S. K.

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Selective scission of pyridine-boronium complexes: mechanical generation of Brønsted bases and polymerizationcatalystsElectronic supplementary information (ESI) available: Addition... by Wiggins, Kelly M, Hudnall, Todd W, Tennyson, Andrew G, Bielawski, Christopher W

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Fluoride ion complexation by a B(2)/Hg heteronuclear tridentate Lewis acid by Dorsey, Christopher L, Jewula, Pawel, Hudnall, Todd W, Hoefelmeyer, James D, Taylor, Thomas J, Honesty, Nicole R, Chiu, Ching-Wen, Schulte, Marcus, Gabbaï, François P

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