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Search Results - Tokranov, V.E.
Search Results - Tokranov, V.E.
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Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(0 0 1) vicinal surfaces
by
Martini, S
,
Quivy, A.A
,
Ugarte, D
,
Lange, C
,
Richter, W
,
Tokranov, V.E
Published in
Journal of crystal growth
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Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction
by
Evtikhiev, V.P.
,
Tokranov, V.E.
,
Kryganovskii, A.K.
,
Boiko, A.M.
,
Suris, R.A.
,
Titkov, A.N.
Published in
Journal of crystal growth
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Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots
by
Kudryashov, I.V
,
Evtikhiev, V.P
,
Tokranov, V.E
,
Kotel'nikov, E.Yu
,
Kryganovskii, A.K
,
Titkov, A.N
Published in
Journal of crystal growth
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Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry
by
Evtikhiev, V. P.
,
Kotel’nikov, E. Yu
,
Kudryashov, I. V.
,
Tokranov, V. E.
,
Faleev, N. N.
Published in
Semiconductors (Woodbury, N.Y.)
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Performance of 980 nm pump laser diodes with GaAs/AlAs graded short period superlattice waveguides
by
Evtikhiev, V.P.
,
Kudryashov, I.V.
,
Tokranov, V.E.
,
Yu, J.S.
,
Yang, S.K.
,
Pak, G.
,
Kim, T.I.
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Journal Of Crystal Growth
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A1. Photoluminescence
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A1. Transmission Electron Microscopy
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A1. Vicinal Surfaces
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Afm Method
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Aluminiumgalliumarsenid
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Aluminiumverbindung
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Debye-Waller-Faktor
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Diode Lasers
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Drei-Fünf-Verbindung
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Gallium Arsenide
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