High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition by Teraji, Tokuyuki, Arima, Kazuya, Wada, Hideki, Ito, Toshimichi

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Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates by Yamamoto, Michinori, Teraji, Tokuyuki, Ito, Toshimichi

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Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films by Teraji, Tokuyuki, Yoshizaki, Satoshi, Wada, Hideki, Hamada, Mitsuhiro, Ito, Toshimichi

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Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies by Muret, Pierre, Pernot, Julien, Teraji, Tokuyuki, Ito, Toshimichi

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Growth of high-quality homoepitaxial CVD diamond films at high growth rate by Teraji, Tokuyuki, Mitani, Satoshi, Wang, Chunlei, Ito, Toshimichi

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Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study by Garino, Yiuri, Teraji, Tokuyuki, Koizumi, Satoshi, Koide, Yasuo, Ito, Toshimichi

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Appearance of n-Type Semiconducting Properties of cBN Single Crystals Grown at High Pressure by Taniguchi, Takashi, Teraji, Tokuyuki, Koizumi, Satoshi, Watanabe, Kenji, Yamaoka, Shinobu

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Monte Carlo simulations of electron transport properties of diamond in high electric fields using full band structure by Watanabe, Tomokatsu, Teraji, Tokuyuki, Ito, Toshimichi, Kamakura, Yoshinari, Taniguchi, Kenji

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Lattice vibrations of single and multi-layer isotopologic graphene by Jeon, Hwansoo, Teraji, Tokuyuki, Watanabe, Kenji, Taniguchi, Takashi, Ryu, Sunmin

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Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond by Kageura, Taisuke, Sasama, Yosuke, Teraji, Tokuyuki, Watanabe, Kenji, Taniguchi, Takashi, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi

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Lattice location of phosphorus in n -type homoepitaxial diamond films grown by chemical-vapor deposition by Hasegawa, Masataka, Teraji, Tokuyuki, Koizumi, Satoshi

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Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients by Muret, Pierre, Pernot, Julien, Teraji, Tokuyuki, Ito, Toshimichi

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High rate growth and electrical/optical properties of high-quality homoepitaxial diamond (100) films by Teraji, Tokuyuki, Hamada, Mitsuhiro, Wada, Hideki, Yamamoto, Michinori, Arima, Kazuya, Ito, Toshimichi

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Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors by Broadway, D. A, Johnson, B. C, Barson, M. S. J, Lillie, S. E, Dontschuk, N, McCloskey, D. J, Tsai, A, Teraji, T, Simpson, D. A, Stacey, A, McCallum, J. C, Bradby, J. E, Doherty, M. W, Hollenberg, L. C. L, Tetienne, J.-P

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Optical-power-dependent splitting of magnetic resonance in nitrogen-vacancy centers in diamond by Ito, Shuji, Tsukamoto, Moeta, Ogawa, Kensuke, Tokuyuki Teraji, Sasaki, Kento, Kobayashi, Kensuke

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Demonstration of geometric diabatic control of quantum states by Sasaki, Kento, Nakamura, Yuki, Tokuyuki Teraji, Oka, Takashi, Kobayashi, Kensuke

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Hillock-Free Homoepitaxial Diamond (100) Films Grown at High Methane Concentrations by Hamada, Mitsuhiro, Teraji, Tokuyuki, Ito, Toshimichi

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Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes by Shimaoka, Takehiro, Teraji, Tokuyuki, Watanabe, Kenji, Koizumi, Satoshi

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Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers by Kawai, Sora, Yamano, Hayate, Sonoda, Takahiro, Kato, Kanami, Buendia, Jorge J, Kageura, Taisuke, Fukuda, Ryosuke, Okada, Takuma, Tanii, Takashi, Higuchi, Taisei, Haruyama, Moriyoshi, Yamada, Keisuke, Onoda, Shinobu, Ohshima, Takeshi, Kada, Wataru, Hanaizumi, Osamu, Stacey, Alastair, Teraji, Tokuyuki, Kono, Shozo, Isoya, Junichi, Kawarada, Hiroshi

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Plasma etching phenomena in heavily boron-doped diamond growth by Fiori, Alexandre, Teraji, Tokuyuki

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