Jets in hadron–hadron collisions by Ellis, S.D., Huston, J., Hatakeyama, K., Loch, P., Tönnesmann, M.

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Measurement of the Ratios of Branching Fractions B(Bs0→Ds-π+)/B(B0→D-π+) and B(B+→D¯0π+)/B(B0→D-π+) by Abulencia, A., Acosta, D., Adelman, J., Affolder, T., Akimoto, T., Albrow, M., Ambrose, D., Amerio, S., Amidei, D., Anastassov, A., Anikeev, K., Annovi, A., Antos, J., Aoki, M., Apollinari, G., Arguin, J.-F., Arisawa, T., Artikov, A., Ashmanskas, W., Attal, A., Azfar, F., Azzi-Bacchetta, P., Azzurri, P., Bacchetta, N., Bachacou, H., Badgett, W., Barbaro-Galtieri, A., Barnes, V., Barnett, B., Baroiant, S., Bartsch, V., Bauer, G., Bedeschi, F., Behari, S., Belforte, S., Bellettini, G., Bellinger, J., Belloni, A., Ben-Haim, E., Benjamin, D., Beretvas, A., Beringer, J., Berry, T., Bhatti, A., Binkley, M., Bisello, D., Bishai, M., Blair, R., Blocker, C., Bloom, K., Blumenfeld, B., Bocci, A., Bodek, A., Boisvert, V., Bolla, G., Bolshov, A., Bortoletto, D., Boudreau, J., Bourov, S., Boveia, A., Brau, B., Bromberg, C., Brubaker, E., Budagov, J., Budd, H., Budd, S., Burkett, K., Busetto, G., Bussey, P., Byrum, K., Cabrera, S., Campanelli, M., Campbell, M., Canelli, F., Canepa, A., Carlsmith, D., Carosi, R., Carron, S., Casarsa, M., Castro, A., Catastini, P., Cauz, D., Cavalli-Sforza, M., Cerri, A., Cerrito, L., Chang, S., Chapman, J., Chen, Y., Chertok, M., Chiarelli, G., Chlachidze, G., Chlebana, F., Cho, I., Cho, K., Chokheli, D., Chou, J., Chu, P., Chuang, S., Chung, K., Chung, W.

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A search for t→τνq in tt¯ production by Abulencia, A., Ambrose, D., Anikeev, K., Annovi, A., Aoki, M., Arisawa, T., Azzi-Bacchetta, P., Badgett, W., Bauer, G., Beretvas, A., Bishai, M., Boisvert, V., Bortoletto, D., Brau, B., Budd, S., Chang, S.H., Chiarelli, G., Chlachidze, G., Chlebana, F., Cho, K., Chuang, S.H., Chung, W.H., Chung, Y.S., Cooper, B., Cyr, D., De Cecco, S., Deng, J., Donati, S., Donini, J., Dorigo, T., Flores-Castillo, L.R., Franklin, M., Fujii, Y., Gerberich, H., Goncharov, M., Goshaw, A.T., Gresele, A., Grinstein, S., Hahn, S.R., Hamilton, A., Hayward, H., Hughes, R.E., Iyutin, B., Jun, S.Y., Kephart, R., Kim, J.E., Kirby, M., Kovalev, A., Kreps, M., Kruse, M., Krutelyov, V., Laasanen, A.T., Lannon, K., Leonardo, N., Li, K., Liu, Y., Loverre, P., Lys, J., Margaroli, F., Maruyama, T., Mattson, M.E., Miles, J., Miller, R., Milnik, M., Mitselmakher, G., Morello, M., Necula, V., Nielsen, J., Oh, S.H., Oldeman, R., Palencia, E., Paoletti, R., Paramonov, A.A., Paus, C., Petruccelli, J., Piedra, J., Pounder, N., Rappoccio, S., van Remortel, N., Rott, C., Saarikko, H., Semenov, A., Shimojima, M., Sill, A., Sisakyan, A., Spinella, F., Sun, H., Tipton, P., Torre, S., Trischuk, W., Tsuno, S., Uozumi, S., Vacavant, L., Vidal, R., Watts, T., Whiteson, D., Wolfe, C., Yu, I., Yu, S.S., Zanetti, A.

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The QCD/SM Working Group: Summary Report by Alekhin, S, Balazs, C, Ball, R, Binoth, T, Boos, E, Botje, M, Cacciari, M, Catani, S, V Del Duca, Dobbs, M, Ellis, S D, Field, R, de Florian, D, te, S, Gardi, E, Gehrmann, T, Gehrmann-De Ridder, A, Giele, W, Glover, E W N, Grazzini, M, -Ph Guillet, J, Heinrich, G, Huston, J, Hinchliffe, I, Ilyin, V, Kanzaki, J, Kato, K, Kersevan, B, Kidonakis, N, Kulesza, A, Kurihara, Y, Laenen, E, Lassila-Perini, K, Lonnblad, L, Magnea, L, Mangano, M, Mazumudar, K, Moch, S, Mrenna, S, Nadolsky, P, Nason, P, Olness, F, Paige, F, Pilon, E, Puljak, I, Pumplin, J, Richter-Was, E, Salam, G, Scalise, R, Seymour, M, Sjostrand, T, Sterman, G, Tonnesmann, M, Tournefier, E, Vogelsang, W, Vogt, A, Vogt, R, Webber, B, C -P Yuan, Zeppenfeld, D

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Time Course of Complete Normalization of Left Ventricular Hypertrophy During Long-Term Antihypertensive Therapy With Angiotensin Converting Enzyme Inhibitors by Franz, Ingomar-Werner, Tönnesmann, Ulrich, Müller, Joachim F.M.

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Selectively grown vertical Si MOS transistor with reduced overlap capacitances by Klaes, D, Moers, J, Tönnesmann, A, Wickenhäuser, S, Vescan, L, Marso, M, Grabolla, T, Grimm, M, Lüth, H

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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth by Moers, J, Klaes, D, Tönnesmann, A, Vescan, L, Wickenhäuser, S, Grabolla, T, Marso, M, Kordoš, P, Lüth, H

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Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates using an InP buffer layer by Schmidt, R., Tonnesmann, A., Forster, A., Grimm, M., Kordos, P., Luth, H.

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Vertical silicon MOSFETs based on selective epitaxial growth by Moers, J., Tonnesmann, A., Klaes, D., Vescan, L., van der Hart, A., Fox, A., Marso, M., Kordos, P., Luth, H.

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