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Lateral scale down of InGaAs/InAs composite-channel hemts with tungsten-based tiered ohmic structure for 2-s/mm gm and 500-GHz fT
by
MATSUZAKI, Hideaki
,
MARUYAMA, Takashi
,
KOASUGI, Toshihiko
,
TAKAHASHI, Hiroyuki
,
TOKUMITSU, Masami
,
ENOKI, Takatomo
Published in
IEEE transactions on electron devices
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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm g sub(m) and 500-GHz f sub(T)
by
Hideaki Matsuzaki, Hideaki Matsuzaki
,
Takashi Maruyama, Takashi Maruyama
,
Toshihiko Koasugi, Toshihiko Koasugi
,
Hiroyuki Takahashi, Hiroyuki Takahashi
,
Masami Tokumitsu, Masami Tokumitsu
,
Takatomo Enoki, Takatomo Enoki
Published in
IEEE transactions on electron devices
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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm g and 500-GHz f
by
Matsuzaki, H.
,
Maruyama, T.
,
Koasugi, T.
,
Takahashi, H.
,
Tokumitsu, M.
,
Enoki, T.
Published in
IEEE transactions on electron devices
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Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten- Based Tiered Ohmic Structure for 2-S/mm g@@dm@ and 500-GHz f@@dT@
by
Matsuzaki, Hideaki
,
Maruyama, Takashi
,
Koasugi, Toshihiko
,
Takahashi, Hiroyuki
,
Tokumitsu, Masami
,
Enoki, Takatomo
Published in
IEEE transactions on electron devices
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Article
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Ieee Transactions On Electron Devices
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Composite Channel
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Hemt
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Inas
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Ingaas
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Inp
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Noise Figure
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Design. Technologies. Operation Analysis. Testing
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F {T}
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Gates
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High Electron Mobility Transistors
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Indium Arsenides
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Indium Gallium Arsenides
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