Search Results - Toshiyuki Mine

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  1. 21
    Single-electron routing in a silicon quantum-dot array

    Single-electron routing in a silicon quantum-dot array by Utsugi, Takeru, Kuno, Takuma, Lee, Noriyuki, Tsuchiya, Ryuta, Mine, Toshiyuki, Hisamoto, Digh, Saito, Shinichi, Mizuno, Hiroyuki

    Published in Physical review. B
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  2. 22
    Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions

    Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions by Shima, Akio, Mine, Toshiyuki, Torii, Kazuyoshi

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  3. 23
    Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing

    Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing by Shima, Akio, Tsuchiya, Ryuta, Mine, Toshiyuki, Torii, Kazuyoshi

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  4. 24
    Leakage Sensor Placement Optimization Using Acoustic Attenuation Features in Water Mains

    Leakage Sensor Placement Optimization Using Acoustic Attenuation Features in Water Mains by Koyama, Akihiro, Sugita, Yusuke, Isobe, Atsushi, Kamada, Yudai, Degawa, Munenori, Mine, Toshiyuki, Kawamoto, Takashi

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  5. 25
    Side-gated ultrathin-channel nanopore FET sensors

    Side-gated ultrathin-channel nanopore FET sensors by Yanagi, Itaru, Oura, Takeshi, Haga, Takanobu, Ando, Masahiko, Yamamoto, Jiro, Mine, Toshiyuki, Ishida, Takeshi, Hatano, Toshiyuki, Akahori, Rena, Yokoi, Takahide, Anazawa, Takashi

    Published in Nanotechnology
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  6. 26
    Electro-Luminescence from Ultra-Thin Silicon

    Electro-Luminescence from Ultra-Thin Silicon by Saito, Shin-ichi, Hisamoto, Digh, Shimizu, Haruka, Hamamura, Hirotaka, Tsuchiya, Ryuta, Matsui, Yuichi, Mine, Toshiyuki, Arai, Tadashi, Sugii, Nobuyuki, Torii, Kazuyoshi, Kimura, Shin'ichiro, Onai, Takahiro

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  7. 27
    Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane

    Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane by Takeda, Ken-ichi, Ryuzaki, Daisuke, Mine, Toshiyuki, Hinode, Kenji, Yoneyama, Ryo

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  8. 28
    Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories

    Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories by Hamamura, H., Ishida, T., Toshiyuki Mine, Okuyama, Y., Digh Hisamoto, Shimamoto, Y., Kimura, S., Kazuyoshi Torii

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  9. 29
    Estimation of the thickness of ultrathin silicon nitride films by X-ray photoelectron spectroscopy

    Estimation of the thickness of ultrathin silicon nitride films by X-ray photoelectron spectroscopy by MUTO, A, MINE, T, NAKAZAWA, M

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  10. 30
    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films

    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films by Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji

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  11. 31
    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO2 films

    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO2 films by Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji

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  12. 32
    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

    Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films by Ishida, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi

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  13. 33
    State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO 2 Films in a Metal–Oxide–Silicon Structure

    State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO 2 Films in a Metal–Oxide–Silicon Structure by Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji

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  14. 34
    Simultaneous Multi-Bit Recording and Driveless Reading for Permanent Storage in Fused Silica

    Simultaneous Multi-Bit Recording and Driveless Reading for Permanent Storage in Fused Silica by Shiozawa, Manabu

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  15. 35
    Single-electron memory for giga-to-tera bit storage

    Single-electron memory for giga-to-tera bit storage by Yano, K., Ishii, T., Sano, T., Mine, T., Murai, F., Hashimoto, T., Kobayashi, T., Kure, T., Seki, K.

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  16. 36
    State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO sub(2) Films in a Metal-Oxide-Silicon Structure

    State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO sub(2) Films in a Metal-Oxide-Silicon Structure by Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji

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  17. 37
    Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

    Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd by Tega, Naoki, Yoshimoto, Hiroyuki, Hisamoto, Digh, Watanabe, Naoki, Shimizu, Haruka, Sato, Shintaroh, Mori, Yuki, Ishigaki, Takashi, Matsumura, Mieko, Konishi, Kumiko, Kobayashi, Keisuke, Mine, Toshiyuki, Akiyama, Satoru, Fujita, Ryusei, Shima, Akio, Shimamoto, Yasuhiro

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  18. 38
    High-Quality CVD SiO2 interfacial layer prepared by cyclic deposition with O2 plasma treatment

    High-Quality CVD SiO2 interfacial layer prepared by cyclic deposition with O2 plasma treatment by Hamamura, Hirotaka, Matsumura, Mieko, Mine, Toshiyuki, Torii, Kazuyoshi

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  19. 39
    Roles of Surface Functional Groups on TiN and SiN Substrates in Resist Pattern Deformations

    Roles of Surface Functional Groups on TiN and SiN Substrates in Resist Pattern Deformations by YAMANAKA, R, MINE, T, TANAKA, T, TERASAWA, T

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  20. 40
    Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm

    Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm by Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.

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