Search Results - Toyama, Mayato

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  1. 1
    Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing

    Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing by Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi

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  2. 2
    Sputter-Deposited-MoS2 MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration

    Sputter-Deposited-MoS2 MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration by Matsuura, Kentaro, Wakabayashi, Hitoshi, Shimizu, Jun'Ichi, Toyama, Mayato, Ohashi, Takumi, Muneta, Iriya, Ishihara, Seiya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi

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  3. 3
    Ohmic contact between titanium and sputtered MoS^sub 2^ films achieved by forming-gas annealing

    Ohmic contact between titanium and sputtered MoS^sub 2^ films achieved by forming-gas annealing by Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun'ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi

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  4. 4
    Ohmic contact between titanium and sputtered MoS 2 films achieved by forming-gas annealing

    Ohmic contact between titanium and sputtered MoS 2 films achieved by forming-gas annealing by Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun’ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi

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  5. 5
    Sputter-Deposited-MoS 2 ${n}$ MISFETs With Top-Gate and Al 2 O 3 Passivation Under Low Thermal Budget for Large Area Integration

    Sputter-Deposited-MoS 2 ${n}$ MISFETs With Top-Gate and Al 2 O 3 Passivation Under Low Thermal Budget for Large Area Integration by Matsuura, Kentaro, Wakabayashi, Hitoshi, Shimizu, Jun'Ichi, Toyama, Mayato, Ohashi, Takumi, Muneta, Iriya, Ishihara, Seiya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi

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