Manufacturing aspects of low pressure chemical-vapor-deposited TiN barrier layers by Travis, E.O., Fiordalice, R.W.

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Disposable polysilicon LDD spacer technology by Parrillo, L.C., Pfiester, J.R., Lin, J.-H., Travis, E.O., Sivan, R.D., Gunderson, C.D.

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An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process by Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E.O., Gunderson, C.D.

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A high-performance half-micrometer generation CMOS technology for fast SRAMs by Hayden, J.D., Baker, F.K., Ernst, S.A., Jones, R.E., Klein, J., Lien, M., McNelly, T.F., Mele, T.C., Mendez, H., Nguyen, B.-Y., Parrillo, L.C., Paulson, W., Pfiester, J.R., Pintchovski, F., See, Y.-C., Sivan, R.D., Somero, B.M., Travis, E.O.

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A scalable submicron contact technology using conformal LPCVD TiN by Travis, E.O., Paulson, W.M., Pintchovski, F., Boeck, B., Parrillo, L.C., Kottke, M.L., Fu, K.-Y., Rice, M.J., Price, J.B., Eichman, E.C.

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