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Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p-n junction with a porous silicon antireflection coating
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Tregulov, V. V.
Published in
Technical physics
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MECHANISMS OF CURRENT FLOW IN THE DIODE STRUCTURE WITH AN [n.sup.+]-p-JUNCTION FORMED BY THERMAL DIFFUSION OF PHOSPHORUS FROM POROUS SILICON FILM
by
Tregulov, V.V
,
Litvinov, V.G
,
Ermachikhin, A.V
Published in
Russian physics journal
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Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure
by
Tregulov, V. V.
,
Litvinov, V. G.
,
Ermachikhin, A. V.
Published in
Semiconductors (Woodbury, N.Y.)
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Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an [n.sup.+]--p-junction and an antireflective porous silicon film
by
Tregulov, V.V
,
Stepanov, V.A
,
Litvinov, V.G
,
Ermachikhin, A.V
Published in
Technical physics
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