Search Results - Tretjakov, V.D.

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    Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

    Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions by Kalinina, E.V., Kholujanov, G.F., Zubrilov, A.S., Tsvetkov, D.V., Vatnik, M.P., Soloviev, V.A., Tretjakov, V.D., Kong, H., Dmitriev, V.A.

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