Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice by Shao, Jun, Lu, Wei, Tsen, G. K. O., Guo, Shaoling, Dell, J. M.

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A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe by Zhang, J., Tsen, G. K. O., Antoszewski, J., Dell, J. M., Faraone, L., Hu, W. D.

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Incorporation and activation of arsenic in MBE-grown HgCdTe by Tsen, G K O, Sewell, R H, Atanacio, A J, Prince, K E, Musca, C A, Dell, J M, Faraone, L

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Magneto-transport characterization of p-type HgCdTe by TSEN, G. K. O, MUSCA, C. A, DELL, J. M, ANTOSZEWSKI, J, FARAONE, L

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Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy by Tsen, G. K. O., Musca, C. A., Dell, J. M., Antoszewski, J., Faraone, L., Becker, C. R.

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Arsenic δ -doped Hg Te ∕ Hg Cd Te superlattices grown by molecularbeam epitaxy by Tsen, G. K. O., Musca, C. A., Dell, J. M., Antoszewski, J., Faraone, L., Becker, C. R.

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Arsenic {delta}-doped HgTe/HgCdTe superlattices grown by molecular beam epitaxy by Tsen, G. K. O., Musca, C. A., Dell, J. M., Antoszewski, J., Faraone, L., Becker, C. R.

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Sidewall effects of MBE grown CdTe for MWIR HgCdTe photoconductors by Zhang, J., Westerhout, R.J., Tsen, G.K.O., Antoszewski, J., Yang, Y., Dell, J.M., Faraone, L.

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Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe by Tsen, G.K.O., Zhang, J., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L.

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Characterisation of arsenic doped HgCdTe grown by Molecular Beam Epitaxy by Tsen, G.K.O., Sewell, R., Atanacio, A.J., Prince, K.E., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L.

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Leukotriene receptor antagonist in the treatment of childhood allergic rhinitis-a randomized placebo-controlled study by Li, Albert M., Abdullah, Victor J., Tsen, Chui S., Au, Chun T., Lam, Hugh S., So, Hung K., Chan, Michael H.M., Leung, Alex W.K., Chan, Iris H.S., Lam, Christopher W.K., Ng, Pak C.

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Transport of the photoexcited electron-hole plasma in InP by Tsen, K.T., Halama, G., Sankey, O.F., Tsen, S.-C.Y.

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Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors by Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, Selim E., Ferry, D. K., Maracas, G., Droopad, Ravi, Salvador, A., Botcharev, A., Morkoç, H.

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Transport of the photoexcited electron-hole plasma in GaAs quantum wells by Tsen, KT, Sankey, OF, Halama, G, Tsen, SC, Morkoc, H

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Time-resolved Raman studies of the photoexcited electron-hole plasma in InP by Tsen, KT, Halama, G, Sankey, OF, Tsen, S, Morkoc, H

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