A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs by CHO, Ming-Hsiang, HUANG, Guo-Wei, WU, Lin-Kun, CHIU, Chia-Sung, WANG, Yueh-Hua, CHEN, Kun-Ming, TSENG, Hua-Chou, HSU, Tsun-Lai

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A Low-Flicker Noise Gate-Controlled Lateral-Vertical Bipolar Junction Transistor Array With 55-nm CMOS Technology by Shuo-Mao Chen, Yean-Kuen Fang, Feng-Renn Juang, Chia-Chung Chen, Liu, Sally, Chin-Wei Kuo, Chih-Ping Chao, Hua-Chou Tseng

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Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications by Kun-Ming Chen, An-Sam Peng, Guo-Wei Huang, Han-Yu Chen, Sheng-Yi Huang, Chun-Yen Chang, Hua-Chou Tseng, Tsun-Lai Hsu, Liang, V.

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psub guard ring design and modeling for the purpose of substrate noise isolation in the SOC era by Tsun-Lai Hsu, Yu-Chia Chen, Hua-Chou Tseng, Liang, V., Jan, J.S.

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Extraction of substrate parameters for RF MOSFETs based on four-port measurement by WU, Shih-Dao, HUANG, Guo-Wei, CHEN, Kun-Ming, CHANG, Chun-Yen, TSENG, Hua-Chou, HSU, Tsun-Lai

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Study of nickel silicide contact on Si/Si1-xGex by Tsung-Hsi Yang, Guangli Luo, Chang, E.Y., Tsung-Yeh Yang, Hua-Chou Tseng, Chun-Yen Chang

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Investigation of a SiGe HBT during ESD stress in a 0.18-μm SiGe BiCMOS process by Shiao-Shien Chen, Tung-Yang Chen, Tien-Hao Tang, Shao-Chang Huang, Hsu, T.-L., Hua-Chou Tseng, Jen-Kon Chen, Chiu-Hsiang Chou

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Temperature effect on power characteristics of SiGe HBTs by PENG, An-Sam, CHEN, Kun-Ming, HUANG, Guo-Wei, CHO, Ming-Hsiang, WANG, Sheng-Chun, DENG, Yu-Min, TSENG, Hua-Chou, HSU, Tsun-Lai

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Characterization of polycrystalline silicon thin film transistors fabricated by ultrahigh-vacuum chemical vapor deposition and chemical mechanical polishing by LIN, H.-Y, CHANG, C.-Y, TAN FU LEI, CHENG, J.-Y, TSENG, H.-C, CHEN, L.-P

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Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors by Lin, Hsiao-Yi, Chang, Chun-Yen, Lei, Tan Fu, Liu, Feng-Ming, Yang, Wen-Luh, Cheng, Juing-Yi, Tseng, Hua-Chou, Chen, Liang-Po

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Epitaxy of Si1-xGex by ultrahigh-vacuum chemical vapor deposition using Si2H6 and GeH4 by LIANG-PO CHEN, TSUNG-CHIH CHOU, WEN-CHUNG TSAI, GUO-WEI HUANG, HUA-CHOU TSENG, HORNG-CHIH LIN, CHUN-YEN CHANG

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The role of a resist during O2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides by CHIEN, C.-H, CHANG, C.-Y, LIN, H.-C, CHANG, T.-F, HSIEN, S.-K, TSENG, I.-C, CHIOU, S.-G, HUANG, T.-Y

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Impact of Hot Carrier Stress on RF Power Characteristics of MOSFETs by Huang, Sheng-Yi, Chen, Kun-Ming, Huang, Guo-Wei, Yang, Dao-Yen, Chang, Chun-Yen, Liang, Victor, Tseng, Hua-Chou

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Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth by TSENG, H.-C, CHANG, C.-Y, PAN, F.-M, CHEN, L.-P

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Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors by Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Victor Liang, Hua-Chou Tseng, Hsu, T.-L., Chun-Yen Chang

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Effects of hot carrier stress and oxide breakdown on RF characteristics of MOSFETs by Kun-Ming Chen, Dao-Yen Yang, Sheng-Yi Huang, Guo-Wei Huang, Li-Hsin Chang, Liang, V., Hua-Chou Tseng, Chun-Yen Chang

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Slow-wave characteristics of interconnects on silicon substrates by Ming-Hsiang Cho, Guo-Wei Huang, Kun-Ming Chen, Hua-Chou Tseng, Tsun-Lai Hsu

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Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors by HUANG, Sheng-Yi, CHEN, Kun-Ming, HUANG, Guo-Wei, HSU, Tsun-Lai, TSENG, Hua-Chou, CHANG, Chun-Yen

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Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications : Integrated Circuits Technologies for RF Circuit Applications by CHEN, Kun-Ming, PENG, An-Sam, HUANG, Guo-Wei, CHEN, Han-Yu, HUANG, Sheng-Yi, CHANG, Chun-Yen, TSENG, Hua-Chou, HSU, Tsun-Lai, LIANG, Victor

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Temperature effects on the performance of 4-port transformers by Sheng-Chun Wang, Guo-Wei Huang, Shi-Dao Wu, Kun-Ming Chen, An-Sam Peng, Ming-Hsiang Cho, Hua-Chou Tseng, Tsun-Lai Hsu

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