Tigecycline-non-susceptible hypervirulent Klebsiella pneumoniae strains in Taiwan by Cheng, Yi-Hsiang, Huang, Tzu-Wen, Juan, Chih-Han, Chou, Sheng-Hua, Tseng, Yao-Yi, Chen, Ting-Wen, Yang, Tsuey-Ching, Lin, Yi-Tsung

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High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET by Yao, Yi-Ju, Yang, Ching-Ru, Tseng, Ting-Yu, Chang, Heng-Jia, Lin, Tsai-Jung, Luo, Guang-Li, Hou, Fu-Ju, Wu, Yung-Chun, Chang-Liao, Kuei-Shu

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Cilostazol enhances mobilization and proliferation of endothelial progenitor cells and collateral formation by modifying vasculo-angiogenic biomarkers in peripheral arterial diseas... by Chao, Ting-Hsing, Tseng, Shih-Ya, Chen, I-Chih, Tsai, Yi-Shan, Huang, Yao-Yi, Liu, Ping-Yen, Ou, Horng-Yih, Li, Yi-Heng, Wu, Hua-Lin, Cho, Chung-Lung, Tsai, Liang-Miin, Chen, Jyh-Hong

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CILOSTAZOL ENHANCES MOBILIZATION AND PROLIFERATION OF CIRCULATING ENDOTHELIAL PROGENITOR CELLS AND COLLATERAL FORMATION MEDIATED BY MODIFYING VASCULO–ANGIOGENIC BIOMARKERS IN PATIE... by Chao, Ting–Hsing, Tseng, Shih–Ya, Tsai, Yi–Shan, Huang, Yao–Yi, Liu, Ping–Yen, Ou, Horng–Yih, Li, Yi–Heng, Shi, Guey–Yueh, Wu, Hua–Lin, Chen, Jyh–Hong

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SiGe/Si Superlattice Ferroelectric HfZrO2 ΩFET and CMOS Inverter with SSmin,n = 62.4 mV/dec, ION/IOFF > 1.0 × 107, and Voltage Gain = 111.4 V/V by Yao, Yi-Ju, Tseng, Ting-Yu, Yang, Ching-Ru, Lin, Tsai-Jung, Chang, Heng-Jia, Luo, Guang-Li, Hou, Fu-Ju, Chang-Liao, Kuei-Shu, Wu, Yung-Chun

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SiGe/Si Superlattice Ferroelectric HfZrO 2 ΩFET and CMOS Inverter With SS min,n = 62.4 mV/dec, I ON /I OFF > 1.0 × 10 7 , and Voltage Gain = 111.4 V/V by Yao, Yi-Ju, Tseng, Ting-Yu, Yang, Ching-Ru, Lin, Tsai-Jung, Chang, Heng-Jia, Luo, Guang-Li, Hou, Fu-Ju, Chang-Liao, Kuei-Shu, Wu, Yung-Chun

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Phase transition and piezoelectric property of (Bi0.5Na0.5)0.94Ba0.06ZryTi1−yO3(y=–0.04) ceramics by Yao, Yi-Quan, Tseng, Tseung-Yuen, Chou, Chen-Chia, Chen, Haydn H. D.

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1.0 × 107, and Voltage Gain = 111.4 V/V by Yi-Ju, Yao, Ting-Yu, Tseng, Ching-Ru, Yang, Tsai-Jung, Lin, Heng-Jia, Chang, Guang-Li Luo, Fu-Ju, Hou, Chang-Liao, Kuei-Shu, Yung-Chun, Wu

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Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four facets by dry etch technology by Yao-Jen Lee, Fu-Ju Hou, Shang-Shiun Chuang, Fu-Kuo Hsueh, Kuo-Hsing Kao, Po-Jung Sung, Wei-You Yuan, Jay-Yi Yao, Yu-Chi Lu, Kun-Lin Lin, Chien-Ting Wu, Hisu-Chih Chen, Bo-Yuan Chen, Guo-Wei Huang, Chen, Henry J. H., Jiun-Yun Li, Yiming Li, Samukawa, Seiji, Tien-Sheng Chao, Tseung-Yuen Tseng, Wen-Fa Wu, Tuo-Hung Hou, Wen-Kuan Yeh

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Phase transition and piezoelectric property of ( Bi 0.5 Na 0.5 ) 0.94 Ba 0.06 Zr y Ti 1 − y O 3 ( y = 0 - 0.04 ) ceramics by Yao, Yi-Quan, Tseng, Tseung-Yuen, Chou, Chen-Chia, Chen, Haydn H. D.

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