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    An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine

    An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine by Topka, Konstantina Christina, Vergnes, Hugues, Tsiros, Tryfon, Papavasileiou, Paris, Decosterd, Laura, Diallo, Babacar, Senocq, François, Samelor, Diane, Pellerin, Nadia, Menu, Marie-Joëlle, Vahlas, Constantin, Caussat, Brigitte

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