Continuous wave operation of quantum cascade lasers with frequency-shifted feedback by Lyakh, A., Barron-Jimenez, R., Dunayevskiy, I., Go, R., Tsvid, G., Patel, C. Kumar N.

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MOCVD-Grown Dilute Nitride Type II Quantum Wells by Mawst, L.J., Huang, J.Y.-T., Xu, D.P., Jeng-Ya Yeh, Tsvid, G., Kuech, T.F., Tansu, N.

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Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs-GaAs Quantum-Well Lasers by Tsvid, G., Kirch, J., Mawst, L.J., Kanskar, M., Cai, J., Arif, R.A., Tansu, N., Smowton, P.M., Blood, P.

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Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures by Rathi, M. K., Tsvid, G., Khandekar, A. A., Shin, J. C., Botez, D., Kuech, T. F.

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Towards intersubband quantum box lasers: Electron-beam lithography update by Tsvid, G., D’Souza, M., Botez, D., Hawkins, B., Khandekar, A., Kuech, T., Zory, P.

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Quantum cascade laser emitting at 10.3 micron for detection of ammonia by Tsvid, G., Wang, X., Fan, J., Troccoli, M.

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Native-oxide-confined high-index-contrast λ = 1.15   μ m strain-compensated InGaAs single quantum well ridge waveguide lasers by Liang, D., Hall, D. C., Huang, J. Y.-T., Tsvid, G., Mawst, L. J.

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Line edge roughness of sub-100 nm dense and isolated features: Experimental study by Ma, Yuansheng, Tsvid, G., Cerrina, Franco

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Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAsaGaAs Quantum-Well Lasers by Tsvid, G, Kirch, J, Mawst, L J, Kanskar, M, Cai, J, Arif, R A, Tansu, N, Smowton, P M, Blood, P

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Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers by Rathi, M.K., Tsvid, G., Shin, J.C., Khandekar, A.A., Botez, D., Kuech, T.F.

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Top-Bottom Stripe Thin Film InGaAs/GaAsP Laser integrated on Silicon by Palit, S., Tsvid, G., Kirch, J., Yu-Ting Huang, J., Tyler, T., Sang-Yeon Cho, Jokerst, N., Mawst, L., Kuech, T.

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Strain Compensated InGaAs/GaAsP Single Quantum Well Thin Film Lasers Integrated onto Si Substrates by Sang-Yeon Cho, Palit, S., Dapeng Xu, Tsvid, G., Jokerst, N., Mawst, L., Kuech, T.

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Broad area metal/metal bonding of thin film edge emitting lasers to silicon by Palit, S., Tsvid, G., Kirch, J., Yu-Ting Huang, J., Mawst, L., Kuech, T., Jokerst, N.

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3.2 µm single spatial mode diode lasers operating at room temperature by Soibel, A, Frez, C, Ksendzov, A, Qiu, Y, Forouhar, S, Chen, J, Hosoda, T, Kipshidze, G, Shterengas, L, Tsvid, G, Belenky, G

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Can proximity x-ray lithography print 35 nm features? Yes by Khan, Mumit, Han, Geng, Tsvid, Gene, Kitayama, Toyoki, Maldonado, Juan, Cerrina, Franco

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Radiative Efficiency of InGaAs/InGaAsP/GaAs Quantum Well Lasers by Tsvid, G., Kirch, J., Mawst, L.J., Kanskar, M., Cai, J., Arif, R.A., Tansu, N., Smowton, P.M., Blood, P.

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