In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering by Lee, J.W, Eom, K, Paudel, T.R, Wang, B, Lu, H, Huyan, H.X, Lindemann, S, Ryu, S, Lee, H, Kim, T.H, Yuan, Y, Zorn, J.A, Lei, S, Gao, W.P, Tybell, Per Thomas Martin, Gopalan, V, Pan, Xiaoqing, Gruverman, A, Chen, L.Q, Tsymbal, Evgeny Yu, Eom, CB

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Epitaxial Antiperovskite/Perovskite Heterostructures for Materials Design by Quintila, Camilo, Song, Kyong, Shao, Ding-Fu, Xie, Lin, Nan, Tianxiang, Paudel, Tula, Campell, Neil, Pan, Xiaoqing, Tybell, Per Thomas Martin, Rzchowski, Mark S, Tsymbal, Evgeny Yu, Choi, Si-Young, Eom, Chang-Beom

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Controlling spin current polarization through non-collinear antiferromagnetism by Nan, Tianxiang, Quintela, Camilo X, Irwin, Julian, Gurung, Gautam, Shao, Ding-Fu, Gibbons, Jonathan D, Campbell, Neil G, Song, Kuyngjun, Choi, Seunghel Y, Guo, Lu, Johnson, Roger D, Manuel, Pascal, Chopdekar, Rajesh V, Hallsteinsen, Ingrid, Tybell, Per Thomas Martin, Ryan, Philip J, Kim, Jinwoong Woo, Choi, Yongseong, Radaelli, Paolo G, Ralph, Daniel C, Tsymbal, Evgeny Yu, Rzchowski, Mark S, Eom, Chang Beom

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Intrinsic ferroelectricity in Y-doped HfO2 thin films by Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Li, Jing, Lu, Ping, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, Xu, Xiaoshan

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In-plane charged domain walls with memristive behaviour in a ferroelectric film by Liu, Zhongran, Wang, Han, Li, Ming, Tao, Lingling, Paudel, Tula R., Yu, Hongyang, Wang, Yuxuan, Hong, Siyuan, Zhang, Meng, Ren, Zhaohui, Xie, Yanwu, Tsymbal, Evgeny Y., Chen, Jingsheng, Zhang, Ze, Tian, He

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Flexible Strain-Sensitive Silicone-CNT Sensor for Human Motion Detection by Demidenko, Natalia A, Kuksin, Artem V, Molodykh, Victoria V, Pyankov, Evgeny S, Ichkitidze, Levan P, Zaborova, Victoria A, Tsymbal, Alexandr A, Tkachenko, Svetlana A, Shafaei, Hassan, Diachkova, Ekaterina, Gerasimenko, Alexander Yu

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Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer by Shi, Shu, Cao, Tengfei, Xi, Haolong, Niu, Jiangzhen, Jing, Xixiang, Su, Hanxin, Yu, Xiaojiang, Yang, Ping, Wu, Yichen, Yan, Xiaobing, Tian, He, Tsymbal, Evgeny Y, Chen, Jingsheng

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Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer by Shi, Shu, Cao, Tengfei, Xi, Haolong, Niu, Jiangzhen, Jing, Xixiang, Su, Hanxin, Yu, Xiaojiang, Yang, Ping, Wu, Yichen, Yan, Xiaobing, Tian, He, Tsymbal, Evgeny Y., Chen, Jingsheng

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Intrinsic ferroelectricity in Y-doped HfO2 thin films by Yu, Yun, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E, Tsymbal, Evgeny Y, Gruverman, Alexei, Xu, Xiaoshan

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Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization by Li, Xin, Ren, Guodong, Lu, Haidong, Samanta, Kartik, Shah, Amit Kumar, Pravan Omprakash, Yu, Yun, Buragohain, Pratyush, Cao, Huibo, Hachtel, Jordan A, Lupini, Andrew R, Miaofang Chi, Tsymbal, Evgeny Y, Gruverman, Alexei, Mishra, Rohan, Xu, Xiaoshan

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