Ferroelectric properties of niobium-doped strontium bismuth tantalate films by Golosov, D. A., Zavadski, S. M., Kolos, V. V., Turtsevich, A. S.

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Effect of annealing on the charge–voltage characteristics of SrBi2(TaxNb1−x)2O9 films by Morozovsky, N.V., Semchenko, A.V., Sidsky, V.V., Kolos, V.V., Turtsevich, A.S., Eliseev, E.A., Morozovska, A.N.

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Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode by Dudar, N. L., Borzdov, V. M., Turtsevich, A. S.

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La3+-doped SrBi2Ta2O9 thin films for FRAM synthesized by sol-gel method by Sidsky, V.V., Semchenko, A.V., Rybakov, A.G., Kolos, V.V., Turtsevich, A.S., Asadchyi, A.N., Strek, W.

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La3＋-doped SrBi2Ta209 thin films for FRAM synthesized by sol-gel method by V.V. Sidsky A.V. Semchenko A.G. Rybakov V.V. Kolos A.S. Turtsevich A.N. Asadchyi W. Strek

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On the sol-gel synthesis of strontium-titanate thin films and the prospects of their use in electronics by Sohrabi Anaraki, H., Gaponenko, N. V., Rudenko, M. V., Guk, A. F., Zavadskij, S. M., Golosov, D. A., Kolosnitsyn, B. S., Kolos, V. V., Pyatlitskij, A. N., Turtsevich, A. S.

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Getter formation in silicon by implantation of antimony ions by Sadovskii, P. K., Chelyadinskii, A. R., Odzhaev, V. B., Tarasik, M. I., Turtsevich, A. S., Vasiliev, Yu. B.

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Identification of nickel silicide phases on a silicon surface from Raman spectra by Solodukha, V. A., Turtsevich, A. S., Solovyev, Ya. A., Sarychev, O. E., Gaponenko, S. V., Milchanin, O. V.

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The structure, morphology and resistivity of in situ phosphorus doped polysilicon films by Lesnikova, V.P, Turtsevich, A.S, Krasnitsky, V.Y, Emelyanov, V.A, Nalivaiko, O.Y, Kravtsov, S.V, Makarevich, T.V

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The effect of production conditions for in situ phosphorus-doped LPCVD polysilicon in monosilane/phosphine system on the deposition process kinetics by Turtsevich, A.S., Krasnitsky, V.Y., Emelyanov, V.A., Nalivaiko, O.Y., Kravtsov, S.V.

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Growth kinetics of low pressure chemically vapour deposited selective tungsten films in WF 6Si and WF 6H 2 systems by Turtsevich, A.S, Krasnitsky, V.Y, Granko, V.I, Lesnikova, V.P, Smal, I.V, Sarychev, O.E, Nalivaiko, O.Y, Kravtsov, S.V

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Growth kinetics of low pressure chemically vapour deposited selective tungsten films in WF6-Si and WF6-H2 systems by TURTSEVICH, A. S, KRASNITSKY, V. Y, GRANKO, V. I, LESNIKOVA, V. P, SMAL, I. V, SARYCHEV, O. E, NALIVAIKO, O. Y, KRAVTSOV, S. V

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