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    CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer

    CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer by Cohen, Guy M., Shi, Leathen, Bangsaruntip, Sarunya, Grill, Alfred, Neumayer, Deborah, Levi, Shimon, Weinberg, Yakov, Shoval, Ori, Adan, Ofer, Tzi, Maayan Bar, Conley, Amiad

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