Search Results - Uesugi, Kasturi

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    Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

    Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy by Zhang, X. Q., Ganapathy, Sasikala, Kumano, Hidekazu, Uesugi, Kasturi, Suemune, Ikuo

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  2. 2
    Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

    Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation by Ganapathy, Sasikala, Kurimoto, Makoto, Thilakan, Periyasamy, Uesugi, Kasturi, Suemune, Ikuo, Machida, Hideaki, Shimoyama, Norio

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    Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures

    Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures by Ganapathy, Sasikala, Thilakan, Periyasamy, Kurimoto, Makoto, Uesugi, Kasturi, Suemune, Ikuo, Shimoyama, Nori

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