Search Results - Uždavinys, Tomas K

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  1. 1
    Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence

    Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence by Uždavinys, Tomas K., Becerra, Daniel L., Ivanov, Ruslan, DenBaars, Steven P., Nakamura, Shuji, Speck, James S., Marcinkevičius, Saulius

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  2. 2
    Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells

    Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells by Ivanov, Ruslan, Marcinkevičius, Saulius, Uždavinys, Tomas K., Kuritzky, Leah Y., Nakamura, Shuji, Speck, James S.

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  3. 3
    Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

    Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy by Marcinkevičius, Saulius, Uždavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

    Published in Physical review. B
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  4. 4
    Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy

    Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy by Mensi, Mounir, Ivanov, Ruslan, Uždavinys, Tomas K, Kelchner, Kathryn M, Nakamura, Shuji, DenBaars, Steven P, Speck, James S, Marcinkevičius, Saulius

    Published in ACS photonics
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  5. 5
    Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

    Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy by Marcinkevicius, Saulius, Uzdavinys, Tomas K., Foronda, Humberto M., Cohen, Daniel A., Weisbuch, Claude, Speck, James S.

    Published in Physical review. B
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