Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes by Alivov, Ya. I., Van Nostrand, J. E., Look, D. C., Chukichev, M. V., Ataev, B. M.

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Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices by McDonald, N.R., Bishop, S.M., Briggs, B.D., Van Nostrand, J.E., Cady, N.C.

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Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO by Reynolds, D.C., Look, D.C., Jogai, B., Van Nostrand, J.E., Jones, R., Jenny, J.

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Molecular beam epitaxial growth of high-quality GaN nanocolumns by Van Nostrand, J.E., Averett, K.L., Cortez, R., Boeckl, J., Stutz, C.E., Sanford, N.A., Davydov, A.V., Albrecht, J.D.

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The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy by MATLOCK, D. M, ZVANUT, M. E, HAIYAN WANG, DIMAIO, Jeffrey R, DAVIS, R. F, VAN NOSTRAND, J. E, HENRY, R. L, KOLESKE, Daniel, WICKENDEN, Alma

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Magnetism in n-type GaMnN grown by molecular beam epitaxy by Van Nostrand, J. E., Albrecht, J. D., Claflin, B., Liu, Y., Nathan, M. I., Ruden, P. P.

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Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure by Xie, Qianghua, Van Nostrand, J. E., Brown, J. L., Stutz, C. E.

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Deformation potentials of the E2(high) phonon mode of AlN by Sarua, A., Kuball, M., Van Nostrand, J. E.

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Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy by VAN NOSTRAND, J. E, ALBRECHT, J. D, CORTEZ, R, LEEDY, K. D, JOHNSON, B, O'KEEFE, M. J

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Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy by FANG, Z.-Q, XIE, Q. H, LOOK, D. C, EHRET, J, VAN NOSTRAND, J. E

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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) by Glaser, E.R, Carlos, W.E, Braga, G.C.B, Freitas, J.A, Moore, W.J, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Bayerl, M.W, Brandt, M.S, Obloh, H, Kozodoy, P, DenBaars, S.P, Mishra, U.K, Nakamura, S, Haus, E, Speck, J.S, Van Nostrand, J.E, Sanchez, M.A, Calleja, E, Ptak, A.J, Myers, T.H, Molnar, R.J

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Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5 by AHOUJJA, M, MCFALL, J. L, YEO, Y. K, HENGEHOLD, R. L, VAN NOSTRAND, J. E

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Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures by Xie, Qianghua, Brown, J. L., Van Nostrand, J. E.

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Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy by Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S

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Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy by Xie, Qianghua, Nostrand, J. E. Van

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Electrical and magnetic characteristics of MBE-grown GaMnN by ALBRECHT, J. D, VAN NOSTRAND, J. E, CLAFLIN, B, LIU, Y, NATHAN, M. I, RUDEN, P. P

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Phonon deformation potentials of the E2(high) phonon mode of AlxGa1−xN by Sarua, A., Kuball, M., Van Nostrand, J. E.

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Effect of Wet Etching on the Magnetic Properties of n-type GaMnN Layers by Liu, Y, Nathan, M I, Ruden, P P, Van Nostrand, J E, Claflin, B, Albrecht, J D

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Shape stabilization and size equalization of InGaAs self-organized quantum dots by Xie, Qianghua, Brown, J L, Jones, R L, Van Nostrand, J E

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Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n -type GaN thin solid films grown by gas-source molecular beam epitaxy by Van Nostrand, J. E., Solomon, J., Saxler, A., Xie, Q.-H., Reynolds, D. C., Look, D. C.

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