A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 Stacks by VANDELLI, L, PADOVANI, A, LARCHER, L, SOUTHWICK, R. G, KNOWLTON, W. B, BERSUKER, G

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Metal oxide resistive memory switching mechanism based on conductive filament properties by Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafría, M.

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Grain boundary-driven leakage path formation in HfO2 dielectrics by Bersuker, G., Yum, J., Vandelli, L., Padovani, A., Larcher, L., Iglesias, V., Porti, M., Nafría, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R.

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A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices by Buscemi, F., Piccinini, E., Vandelli, L., Nardi, F., Padovani, A., Kaczer, B., Garbin, D., Clima, S., Degraeve, R., Kar, G. S., Tavanti, F., Slassi, A., Calzolari, A., Larcher, L.

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Efficacy of mechanical thrombectomy in patients with ischemic stroke and cancer by Ciolli, L., Bigliardi, G., Ferraro, D., Maffei, S., Vandelli, L., Dell'Acqua, ML, Rosafio, F., Picchetto, L., Laterza, D., Vincenzi, C., Meletti, S., Vallone, S., Zini, A.

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Factors affecting the outcome of delayed intravenous thrombolysis (>4.5hours) by Elsaid, N., Bigliardi, G., Dell’Acqua, M.L., Vandelli, L., Ciolli, L., Picchetto, L., Borzì, G., Ricceri, R., Pentore, R., Vallone, S., Meletti, S., Saied, A.

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Telestroke modena project: Hub and spoke comparison by Picchetto, L, Capitelli, M, Dell'Acqua, M.L, Bigliardi, G, Fontana, M.C, Barbi, F, Romagnoli, E, Gentile, M, Pentore, R, Vandelli, L, Baldini, T, Rosafio, F, Barozzi, G, Cioni, G, Nichelli, P, Zini, A

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SrTiOx for sub-20nm DRAM technology nodes—Characterization and modeling by Kaczer, B., Larcher, L., Vandelli, L., Reisinger, H., Popovici, M., Clima, S., Ji, Z., Joshi, S., Swerts, J., Redolfi, A., Afanas’ev, V.V., Jurczak, M.

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A Physical Model of the Temperature Dependence of the Current Through \hbox\hbox\hbox Stacks by Vandelli, L., Padovani, A., Larcher, L., Southwick, R. G., Knowlton, W. B., Bersuker, G.

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ICHOSA (Intra Cerebral Hemorrage and Obstructive Sleep Apnea) project: first results by Picchetto, L., Pizza, F., Bigliardi, G., Giacobazzi, L., Dell'Acqua, M., Vandelli, L., Ciolli, L., Vandelli, G., Rosafio, F., Ricceri, R., Galli, C., Vitetta, F., Zini, A., Meletti, S., Plazzi, G.

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A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs by Sereni, G., Vandelli, L., Larcher, L., Morassi, L., Veksler, D., Bersuker, G.

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Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics by Padovani, A., Larcher, L., Vandelli, L., Bertocchi, M., Cavicchioli, R., Veksler, D., Bersuker, G.

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Modeling temperature dependency (6 - 400K) of the leakage current through the SiO2/high-K stacks by Vandelli, L, Padovani, A, Larcher, L, Southwick, R G, Knowlton, W B, Bersuker, G

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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations by Padovani, A., Arreghini, A., Vandelli, L., Larcher, L., Van den bosch, G., Pavan, P., Van Houdt, J.

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Carotid artery stenting during endovascular thrombectomy for acute ischemic stroke with tandem occlusion: the Italian Registry of Endovascular Treatment in Acute Stroke by Sallustio, Fabrizio, Pracucci, Giovanni, Cappellari, Manuel, Saia, Valentina, Mascolo, Alfredo Paolo, Marrama, Federico, Gandini, Roberto, Koch, Giacomo, Diomedi, Marina, D’Agostino, Federica, Rocco, Alessandro, Da Ros, Valerio, Wlderk, Andrea, Nezzo, Marco, Argirò, Renato, Morosetti, Daniele, Renieri, Leonardo, Nencini, Patrizia, Vallone, Stefano, Zini, Andrea, Bigliardi, Guido, Pitrone, Antonio, Grillo, Francesco, Bracco, Sandra, Tassi, Rossana, Bergui, Mauro, Naldi, Andrea, Carità, Giuseppe, Casetta, Ilaria, Gasparotti, Roberto, Magoni, Mauro, Simonetti, Luigi, Haznedari, Nicolò, Paolucci, Matteo, Mavilio, Nicola, Malfatto, Laura, Menozzi, Roberto, Genovese, Antonio, Cosottini, Mirco, Orlandi, Giovanni, Comai, Alessio, Franchini, Enrica, Pedicelli, Alessandro, Frisullo, Giovanni, Puglielli, Edoardo, Casalena, Alfonsina, Cester, Giacomo, Baracchini, Claudio, Castellano, Davide, Di Liberto, Alessandra, Ricciardi, Giuseppe Kenneth, Chiumarulo, Luigi, Petruzzellis, Marco, Lafe, Elvis, Persico, Alessandra, Cavasin, Nicola, Critelli, Adriana, Semeraro, Vittorio, Tinelli, Angelica, Giorgianni, Andrea, Carimati, Federico, Auteri, William, Rizzuto, Stefano, Biraschi, Francesco, Nicolini, Ettore, Ferrari, Antonio, Melis, Maurizio, Calia, Stefano, Tassinari, Tiziana, Nuzzi, Nunzio Paolo, Corato, Manuel, Sacco, Simona, Squassina, Guido, Invernizzi, Paolo, Gallesio, Ivan, Ruiz, Luigi, Dui, Giovanni, Carboni, Nicola, Amistà, Pietro, Russo, Monia, Maiore, Mario, Zanda, Bastianina, Craparo, Giuseppe, Mannino, Marina, Inzitari, Domenico, Toni, Danilo, Mangiafico, Salvatore

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(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology by Larcher, Luca, Sereni, Gabriele, Vandelli, Luca

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Random telegraph noise (RTN) in scaled RRAM devices by Veksler, D., Bersuker, G., Vandelli, L., Padovani, A., Larcher, L., Muraviev, A., Chakrabarti, B., Vogel, E., Gilmer, D. C., Kirsch, P. D.

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A novel technique exploiting C–V, G–V and I–V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs by Sereni, G., Larcher, L., Vandelli, L., Veksler, D., Kim, T., Koh, D., Bersuker, G.

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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties by Bersuker, G, Gilmer, D C, Veksler, D, Yum, J, Park, H, Lian, S, Vandelli, L, Padovani, A, Larcher, L, McKenna, K, Shluger, A, Iglesias, V, Porti, M, Nafria, M, Taylor, W, Kirsch, P D, Jammy, R

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Progresses in Modeling HfOx RRAM Operations and Variability by Larcher, Luca, Pirrotta, Onofrio, Puglisi, Francesco Maria, Padovani, Andrea, Pavan, Paolo, Vandelli, Luca

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