Pressure of neon, argon and xenon bubbles in aluminium by VOM FELDE, A, FINK, J, MULLER-HEINZERLING, T, PFLUGER, J, SCHEERER, B, LINKER, G, KALETTA, D

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Quantum size effects in excitations of potassium clusters by VOM FELDE, A, FINK, J, EKARDT, W

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Valence-electron excitations in the alkali metals by VOM FELDE, A, SPRÖSSER-PROU, J, FINK, J

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Plasmons in the Heavy Alkali Metals: Strong Deviations from RPA by Felde, A. vom, Fink, J, Büche, Th, Scheerer, B, Nücker, N

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Excitation of bubble surface plasmons in rare-gas-irradiated aluminum films by VOM FELDE, A, FINK, J

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Aluminum bulk-plasmon dispersion and its anisotropy by SPRÖSSER-PROU, J, VOM FELDE, A, FINK, J

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Surface effects on carrier dynamics : photoconductivity studies on Si (111) by HSU, J. W. P, BAHR, C. C, VOM FELDE, A, DOWNEY, S. W, HIGASHI, G. S, CARDILLO, M. J

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Competition between desorption and diffusion at a GaAs(110) surface by vom Felde, A., Bahr, C.C., Cardillo, M.J.

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Carrier excitation by hyperthermal Xe collisions at a Si(111):As surface by Hsu, J.W.P., Bahr, C.C., vom Felde, A., Miller, D.R., Cardillo, M.J.

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Enhanced room temperature oxidation of GaAs(100) using NO2 by VOM FELDE, A, MEIGS, G, BAHR, C. C, CARDILLO, M. J

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Oxidation of GaAs(110) with NO2 : infrared spectroscopy by VOM FELDE, A, KERN, K, HIGASHI, G. S, CHABAL, Y. J, CHRISTMAN, S. B, BAHR, C. C, CARDILLO, M. J

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Monitoring low-coverage surface chemistry with bulk transport : NO2 dissociation and oxygen penetration at at GaAs(110) surface by VOM FELDE, A, BAHR, C, KERN, K, HIGASHI, G. S, CHABAL, Y. J, CARDILLO, M. J

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Carrier excitation by atomic collision on GaAs(110) by Weiss, P.S, Trevor, P.L, Kern, K, Vom Felde, A, Cardillo, M.J

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Oxidation of GaAs(110) with NO2: A molecular beam study by Bahr, C. C., vom Felde, A., Buratto, S. K., Cardillo, Mark J.

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Enhanced room temperature oxidation of GaAs(100) using NO 2 by vom Felde, A., Meigs, G., Bahr, C.C., Cardillo, M.J.

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NO 2 dissociation and O penetration at a GaAs(110) surface by Bahr, C.C., vom Felde, A., Cardillo, M.J.

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Low temperature adsorption and reactions of NO on GaAs(110) by KERN, K, CHABAL, Y, HIGASHI, G, VOM FELDE, A, CARDILLO, M

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NO2 dissociation and O penetration at a GaAs(110) surface by Bahr, C.C., vom Felde, A., Cardillo, M.J.

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Carrier excitation by hyperthermal Xe collisions at a Si(111): As surface by Hsu, J.W.P., Bahr, C.C., vom Felde, A., Miller, D.R., Cardillo, M.J.

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The role of point defect sources in the formation of boron polyemitters by Berthold, A., Vom Felde, A., Biebl, M., von Philipsborn, H.

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