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Material Aspects and Challenges for SOI FinFET Integration
by
Van Dal, Mark J.
,
Vellianitis, Georgios
,
Duffy, Ray
,
Doornbos, Gerben
,
Pawlak, Bartek
,
Duriez, Blandine
,
Lai, Lhi-Shue
,
Hikavyy, Andriy Y.
,
Vandeweyer, Tom
,
Demand, Marc
,
Altamirano, Efrain
,
Rooyackers, Rita
,
Witters, Liesbeth
,
Collaert, Nadine
,
Jurczak, Malgorzata
,
Kaiser, Monja
,
Weemaes, Robbert G.
,
Lander, Rob
Published in
ECS transactions
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Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme
by
Rooyackers, Rita
,
Vandooren, Anne
,
Verhulst, Anne S.
,
Walke, Amey Mahadev
,
Simoen, Eddy
,
Devriendt, Katia
,
Lo-Corotondo, Sabrina
,
Demand, Marc
,
Bryce, George
,
Loo, Roger
,
Hikavyy, Andriy
,
Vandeweyer, Tom
,
Huyghebaert, Cedric
,
Collaert, Nadine
,
Thean, Aaron V. Y.
Published in
IEEE transactions on electron devices
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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants
by
Hellings, G.
,
Mitard, J.
,
Eneman, G.
,
De Jaeger, B.
,
Brunco, D.P.
,
Shamiryan, D.
,
Vandeweyer, T.
,
Meuris, M.
,
Heyns, M.M.
,
De Meyer, K.
Published in
IEEE electron device letters
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In-Line Critical Dimension and Sidewall Roughness Metrology Study for Compound Nanostructure Process Control by in-Line 3D Atomic Force Microscope
by
Kim, Tae-Gon
,
Ryu, Heon-Yul
,
Jo, Ah-jin
,
Cho, Sang-Joon
,
Park, Sang-il
,
Vandeweyer, Tom
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New lithographic requirements for the implant levels in scaled devices
by
Vandeweyer, Tom
,
Baerts, Christina
,
Horiguchi, Naoto
,
Ercken, Monique
Published in
Microelectronic engineering
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A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
by
Van Huylenbroeck, S.
,
Sibaja-Hernandez, A.
,
Venegas, R.
,
You, S.
,
Winderickx, G.
,
Radisic, D.
,
Lee, W.
,
Ong, P.
,
Vandeweyer, T.
,
Nguyen, N.D.
,
De Meyer, K.
,
Decoutere, S.
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