Search Results - Variar, Harsha B.

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  1. 1
    Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs

    Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETs by Kumar, Jeevesh, Meersha, Adil, Variar, Harsha B., Mishra, Abhishek, Shrivastava, Mayank

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  2. 2
    Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices

    Vacancy Assisted Bilayer Graphene Contact for Monolayer Graphene Channel Devices by Meersha, Adil, Kumar, Jeevesh, Mishra, Abhishek, Variar, Harsha B., Shrivastava, Mayank

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  3. 3
    Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD-Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs

    Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD-Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs by Ansh, Shrivastava, Mayank, Kumar, Jeevesh, Sheoran, Gaurav, Variar, Harsha B., Mishra, Ravikesh, Kuruva, Hemanjaneyulu, Meersha, Adil, Mishra, Abhishek, Raghavan, Srinivasan

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  4. 4
    Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits

    Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits by Mishra, Abhishek, Meersha, Adil, Kranthi, N. K., Kumar, Jeevesh, Bellamkonda, N. S. Veenadhari, Variar, Harsha B., Shrivastava, Mayank

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  5. 5
    Circuit Reliability of \text Channel Based 2D Transistors

    Circuit Reliability of \text Channel Based 2D Transistors by Rai, Anand Kumar, Variar, Harsha B., Shrivastava, Mayank

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  6. 6
    Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices

    Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs Devices by Kumar, Jeevesh, Kuruva, Hemanjaneyulu, Variar, Harsha B., Patbhaje, Utpreksh, Shrivastava, Mayank

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  7. 7
    3D Approaches to Engineer Holding Voltage of SCR

    3D Approaches to Engineer Holding Voltage of SCR by Gautam, Satendra Kumar, Variar, Harsha B, Luo, Juan, Shi, Ning, Marreiro, David, Mallikarjunaswamy, Shekar, Shrivastava, Mayank

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  8. 8
    Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept

    Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept by Variar, Harsha B, Gautam, Satendra Kumar, Kumar, Ashita, Amogh, K M, Luo, Juan, Shi, Ning, Marreiro, David, Mallikarjunaswamy, Shekar, Shrivastava, Mayank

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  9. 9
    Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs

    Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs by Kranthi, N. K., Mishra, Abhishek, Meersha, Adil, Variar, Harsha B., Shrivastava, Mayank

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  10. 10
    First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects

    First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects by Mishra, Abhishek, Meersha, Adil, Kranthi, N.K., Trivedi, Kruti, Variar, Harsha B., Veenadhari Bellamkonda, N S, Raghavan, Srinivasan, Shrivastava, Mayank

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  11. 11
    Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

    Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs by Ansh, Kumar, Jeevesh, Sheoran, Gaurav, Variar, Harsha B, Mishra, Ravi K, Kuruva, Hemanjaneyulu, Meersha, Adil, Mishra, Abhishek, Raghavan, Srinivasan, Shrivastava, Mayank

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