Search Results - Vasi, J.M.

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  1. 1
    Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation

    Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation by Sandhya, C., Ganguly, U., Chattar, N., Olsen, C., Seutter, S.M., Date, L., Hung, R., Vasi, J.M., Mahapatra, S.

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  2. 2
    New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis

    New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis by Roy, A.S., Vasi, J.M., Patil, M.B.

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  3. 3
    A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis

    A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis by Roy, A.S., Vasi, J.M., Patil, M.B.

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  4. 4
    Experimental observation of avalanche multiplication in charge-coupled devices

    Experimental observation of avalanche multiplication in charge-coupled devices by Madan, S.K., Bhaumik, B., Vasi, J.M.

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  5. 5
    Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs

    Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs by Mahapatra, S, Rao, V.R, Cheng, B, Khare, M, Parikh, C.D, Woo, J.C.S, Vasi, J.M

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  6. 6
    Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si/sub 3/N/sub 4/ MNSFETs

    Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si/sub 3/N/sub 4/ MNSFETs by Mahapatra, S., Rao, V.R., Cheng, B., Khare, M., Parikh, C.D., Woo, J.C.S., Vasi, J.M.

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  7. 7
    Evaluation of non-quasi-static effects during SEU in deep-submicron MOS devices and circuits

    Evaluation of non-quasi-static effects during SEU in deep-submicron MOS devices and circuits by Palkesh Jain, Kumar, D.V., Vasi, J.M., Patil, M.B.

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    Conference Proceeding
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  8. 8
    A novel method to obtain 3-port network parameters from 2-port measurements [MOSFET example]

    A novel method to obtain 3-port network parameters from 2-port measurements [MOSFET example] by Jha, A., Vasi, J.M., Rustagi, S.C., Patil, M.B.

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