Compression of Hydrogen Gas for Energy Storage: A Review by Orlova, S, Mezeckis, N, Vasudev, V P K

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Numerical Modelling of a Turbine Flow Meter Used as Part of the Hydrogen Compressor System by Orlova, S, Devdas, T N, Vasudev, V P K, Upnere, S

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Two-dimensional analytic modeling of very thin SOI MOSFETs by Woo, J.C.S., Terrill, K.W., Vasudev, P.K.

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CMOS device and interconnect technology enhancements for low power/low voltage applications by Vasudev, P.K.

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Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface : surface-enhanced X-ray diffraction and TEM studies by TONG, H. Y, SHI, F. G, ZHAO, B, WANG, S.-Q, BRONGO, M, VASUDEV, P. K

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Strip-plot design for two-step processes by Milliken, George A., Shi, Xiaoyu, Mendicino, Michael, Vasudev, P. K.

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A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric by Zhao, B., Biberger, M.A., Hoffman, V., Wang, S.-Q., Vasudev, P.K., Seidel, T.E.

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Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application by Mendicino, M.A., Vasudev, P.K., Maillot, P., Hoener, C., Baylis, J., Bennett, J., Boden, T., Jackett, S., Huffman, K., Godwin, M.

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Advanced materials for low power electronics by Vasudev, P.K., Mendicino, M., Seidel, T.E.

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Electroless copper deposition solution induced chemical changes in low- k fluorinated dielectrics by Hsu, D.T., Shi, F.G., Lopatin, S., Shacham-Diamand, Y., Zhao, B., Brongo, M., Vasudev, P.K.

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Si-ULSI with a scaled down future by Vasudev, P.K., Zeitzoff, P.M.

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The early breakdown characteristics of thin gate oxide on SOI wafers by Jin-Ho Seo, Woo, J.C., Maszara, W., Vasudev, P.K.

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IIB-6 recent advances in the rapid thermal annealing of boron and BF 2 + implanted source-drain junctions for submicrometer CMOS technology by Vasudev, P.K., Schmitz, A., Olson, G.L.

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Substrate current measurements in thin SOI MOSFET's at 300 and 77 K by Kistler, N., Woo, J., Viswanathan, C.R., Terril, K., Vasudev, P.K.

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Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing by Maszara, W.P., Gondran, C.F.H., Jackett-Murphy, S., Vasudev, P.K., Iyer, S.S., Anc, M.J.

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Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT's at X-band by Vasudev, P.K.

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Low dose SIMOX and impact of ITOX process on quality of SOI film by Maszara, W.P., Bennett, J., Boden, T., Dockerty, R., Gondran, C.F.H., Jackett-Murphy, S., Vasudev, P.K., Anc, M.J., Hovel, H.

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A short-channel CMOS/SOS technology in recrystallized 0.3-µm-thick silicon-on-sapphire films by Mayer, D.C., Vasudev, P.K., Lee, J.Y., Allen, Y.K., Henderson, R.C.

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IIB-6 recent advances in the rapid thermal annealing of boron and BF2+implanted source-drain junctions for submicrometer CMOS technology by Vasudev, P.K., Schmitz, A., Olson, G.L.

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Characterization of low dose SIMOX for low power electronics by Anc, M.J., Allen, L.P., Dolan, R.P., Cordts, B.F., Ryding, G., Mendicino, M.A., Xiaoyu Shi, Maszara, W., Dockerty, R., Vasudev, P.K., Roitman, P.

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