The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment by Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.

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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications by Renz, A B, Li, F, Vavasour, O J, Gammon, P M, Dai, T, Baker, G W C, Via, F La, Zielinski, M, Zhang, L, Grant, N E, Murphy, J D, Mawby, P A, Jennings, M, Shah, V A

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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal by Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A.

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Modelling the inhomogeneous SiC Schottky interface by Gammon, P. M., Pérez-Tomás, A., Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, M., Fisher, C. A., Jennings, M. R., Leadley, D. R., Mawby, P. A.

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